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Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions
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10.1063/1.4812563
/content/aip/journal/jap/114/2/10.1063/1.4812563
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4812563
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Fabrication process flow. (b) Representative SEM images of a device after fabrication. The magnified image depicts the elevated InAs QW floor, which was designed to isolate the InAs QW from the GaSb substrate.

Image of FIG. 2.
FIG. 2.

(a) Device schematic showing the configuration of the applied voltages. (b) The measured current as a function of the tunnel diode voltage ( ) when the gate bias is swept from −0.4 V to 1.2 V in 0.4 V steps. (c) The measured current as a function of the gate bias at a fixed of −0.45 V. The device active area is 0.375 × 24 m.

Image of FIG. 3.
FIG. 3.

(a) Qualitative band alignment of the 2D/3D tunnel diode. (b) The measured peak positions (T1, T2) and separations (T2-T1) as a function of .

Image of FIG. 4.
FIG. 4.

Measured (red) and simulated (black) curves of a gated diode at  = 0 V.

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/content/aip/journal/jap/114/2/10.1063/1.4812563
2013-07-09
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4812563
10.1063/1.4812563
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