SEM images of Ag deposited on top of Si. Figures (a) and (b), which correspond to nominal thicknesses of 3 nm and 6 nm, respectively, show that before the Ag films become continuous layers, there is a formation of nanostructures that act as molds for the deposited Py film. Figures (c) and (d) show that for tAg > 10 nm, the Ag films are continuous layers and there is no formation of defects on the surface of the Py layer.
In-plane dependence of the FMR field (solid squares) and linewidth (solid circles) for a single film of Py(10 nm) on Si(001). The solid lines are fits to the data. The in-plane dependence of the ΔHHWHM linewidth is explained as a superposition of the intrinsic Gilbert mechanism (red dashed line) plus an extrinsic two-magnon scattering mechanism (black dashed line).
In-plane dependence of ΔH for samples Ag(3 nm)/Py(10 nm)/Ag(3 nm) (a) and Ag(6 nm)/Py(10 nm)/Ag(6 nm) (b). The solid blue line is the best fit to the data that include the contribution of the intrinsic Gilbert damping (red dashed lines) and extrinsic contributions: two-magnons (black dashed lines) and fluctuation of the magnetization (green dashed lines).
Dependence of the average values of the FMR linewidth as a function of the Ag layer thickness for the series of samples Si(001)/Ag(t)/Py(10 nm)/Ag(t), given by the solid blue circles. Error bars are extracted from the average values of 18 FMR sweeps, where the sample is rotated by 20° for each value. The inset shows the in-plane dependence of ΔH for two series of samples in which the Ag layer is only deposited as buffer layer (black solid circles) or only as cover layers (red solid circles).
Parameters extracted from numerical fits to the data.
Article metrics loading...
Full text loading...