RBS/channeling spectra of Group-A and Group-B samples processed with two anneals: one at 750 °C after H implantation and the other at 700 °C after Ag implantation. The right panel shows the RBS/channeling signals from the Si surface regions.
RBS spectra displaying the Ag depth distributions Group-A and Group-B samples with the post-H-implantation annealing at 850 °C.
Integrated RBS intensity of Ag signals from the nanocavity layer for different annealing conditions.
The reduction in Ag RBS signal intensities in annealed samples as opposed to the as-implanted samples, showing the amount of Ag diffusing into the bulk of Si.
Cross sectional TEM pictures for samples with the post-H-implantation annealing at 850 °C and the post-Ag-implantation annealing 800 °C.
Areal density of nanocavities for samples shown in Figure 5 .
Arrhenius plots for the diffused Ag amount and annealing temperatures.
Schematic of possible Ag pathways during diffusion process in samples of Group-A and Group-B Si.
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