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Effects of surface oxide layer on nanocavity formation and silver gettering in hydrogen ion implanted silicon
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10.1063/1.4812736
/content/aip/journal/jap/114/2/10.1063/1.4812736
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4812736
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RBS/channeling spectra of Group-A and Group-B samples processed with two anneals: one at 750 °C after H implantation and the other at 700 °C after Ag implantation. The right panel shows the RBS/channeling signals from the Si surface regions.

Image of FIG. 2.
FIG. 2.

RBS spectra displaying the Ag depth distributions Group-A and Group-B samples with the post-H-implantation annealing at 850 °C.

Image of FIG. 3.
FIG. 3.

Integrated RBS intensity of Ag signals from the nanocavity layer for different annealing conditions.

Image of FIG. 4.
FIG. 4.

The reduction in Ag RBS signal intensities in annealed samples as opposed to the as-implanted samples, showing the amount of Ag diffusing into the bulk of Si.

Image of FIG. 5.
FIG. 5.

Cross sectional TEM pictures for samples with the post-H-implantation annealing at 850 °C and the post-Ag-implantation annealing 800 °C.

Image of FIG. 6.
FIG. 6.

Areal density of nanocavities for samples shown in Figure 5 .

Image of FIG. 7.
FIG. 7.

Arrhenius plots for the diffused Ag amount and annealing temperatures.

Image of FIG. 8.
FIG. 8.

Schematic of possible Ag pathways during diffusion process in samples of Group-A and Group-B Si.

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/content/aip/journal/jap/114/2/10.1063/1.4812736
2013-07-08
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of surface oxide layer on nanocavity formation and silver gettering in hydrogen ion implanted silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4812736
10.1063/1.4812736
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