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Surface morphology evolution of m-plane GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature
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10.1063/1.4813079
/content/aip/journal/jap/114/2/10.1063/1.4813079
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4813079
/content/aip/journal/jap/114/2/10.1063/1.4813079
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/content/aip/journal/jap/114/2/10.1063/1.4813079
2013-07-11
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface morphology evolution of m-plane (11¯00) GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4813079
10.1063/1.4813079
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