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Surface morphology evolution of m-plane GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature
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10.1063/1.4813079
/content/aip/journal/jap/114/2/10.1063/1.4813079
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4813079
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Growth rates of m-plane GaN as a function of Ga beam flux at substrate temperature of 740 °C and 720 °C (b) Ga/N ratio as a function of Ga beam flux at substrate temperature of 740 °C and 720 °C.

Image of FIG. 2.
FIG. 2.

Surface morphology evolution of m-plane GaN as a function of Ga/N ratio on –c miscut substrates at 740 °C over an area of 16 m. The first 3 specimens (a)–(c) were grown sequentially on a single substrate with miscut toward –c = 0.46°. The specimen (d) was grown on a substrate with miscut toward –c = 0.67°. The last 3 specimens (e)–(g) were grown sequentially on another single substrate with miscut toward –c = 0.61°. Typical morphology of a starting Kyma substrate with miscut toward –c = 0.14° prior to MBE growth is shown in (h). Note this last image is over an area of 1 m.

Image of FIG. 3.
FIG. 3.

The surface morphology evolution on +c miscut m-plane GaN substrates at T = 740 °C. The first 3 specimens (a)–(c) were grown on a single substrate with miscut toward +c = 0.38°. Specimen (c) was grown first while specimen (a) was grown last. The last 3 specimens (d)–(f) were grown sequentially on another single substrate with miscut toward +c = 0.52°.

Image of FIG. 4.
FIG. 4.

Surface morphology of 50 nm GaN growth on -c miscut m-plane GaN substrate with T = 720 °C and Ga/N = 1.2. The substrate is miscut towards –c = 0.2°. (a) over 1 m area, (b) over 16 m area, and (c) over 100 m area.

Image of FIG. 5.
FIG. 5.

Surface morphology for 100 nm of GaN grown at T = 720 °C and Ga/N = 1.2 for three substrates with miscut angle of (a) 0.2°, (b) 0.4°, and (c) 1.4° towards –c.

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/content/aip/journal/jap/114/2/10.1063/1.4813079
2013-07-11
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface morphology evolution of m-plane (11¯00) GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4813079
10.1063/1.4813079
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