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Numerical investigation of the plasma-aided fabrication of stoichiometric InAs nanodots at early stage of the growth
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10.1063/1.4813116
/content/aip/journal/jap/114/2/10.1063/1.4813116
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4813116

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the plasma sheath and InAs nanodots growth on silicon surface, (b) plasma heating process, and (c) fluxes of ions and adsorbed ions to/from the nanodot.

Image of FIG. 2.
FIG. 2.

Time evolution of the adsorbed ion balance factor (a) and size distribution of the nanodots (b) for different electron temperatures . Solid, dotted, dashed, and dashed-dotted curves correspond to  = 1 eV, 1.4 eV, 1.8 eV, and  = 2.2 eV, respectively.

Image of FIG. 3.
FIG. 3.

Time evolution of the adsorbed ion balance factor (a) and size distribution of the nanodots (b) for different ion-to-electron density ratios Solid, dotted, dashed, and dashed-dotted curves correspond to  = 0.65, 0.75, 0.85, and  = 0.95, respectively.

Image of FIG. 4.
FIG. 4.

Time evolution of the adsorbed ion balance factor (a) and size distribution of the nanodots (b) for different electron number densities . Solid, dotted, dashed, and dashed-dotted curves correspond to  = 1.5  10 cm, 3.0   10 cm, 4.5   10 cm, and  = 6.0   10 cm, respectively.

Image of FIG. 5.
FIG. 5.

Dependence of absorbed ion balance factor on electron temperature for an ion-to-electron density ratio of  = 0.7 (dotted),  = 0.8 (dashed),  = 0.9 (dashed-dotted), and for a process time period of (a) 2 ms, (b) 7 ms, (c) 12 ms.

Image of FIG. 6.
FIG. 6.

Dependence of flux balance factor on electron temperature for an electron number density of  = 2.0   10 cm (dotted),  = 4.0  10 cm (dashed),  = 6.0   10 cm (dashed-dotted), and for a process time period of (a) 2 ms, (b) 7 ms, (c) 12 ms.

Image of FIG. 7.
FIG. 7.

Dependence of stoichiometric factor on for an ion-to-electron density ratio of  = 0.7 (dotted),  = 0.8 (dashed),  = 0.9 (dashed-dotted), and for a process time period of (a) 2 ms, (b) 7 ms, (c) 12 ms.

Tables

Generic image for table
Table I.

Parameters and representative values of the simulation.

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/content/aip/journal/jap/114/2/10.1063/1.4813116
2013-07-08
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Numerical investigation of the plasma-aided fabrication of stoichiometric InAs nanodots at early stage of the growth
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4813116
10.1063/1.4813116
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