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Enhanced p-type conduction of B-doped nanocrystalline diamond films by high temperature annealing
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10.1063/1.4813134
/content/aip/journal/jap/114/2/10.1063/1.4813134
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4813134
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

HRTEM images of (a) as-deposited (50 nm scale), (b) 1000 °C annealed (50 nm scale), (c) as-deposited (5 nm scale), and (d) 1000 °C annealed (5 nm scale) B-doped NCD films. The inset images c and c in (c) show the corresponding FT images of zone c and c. The inset images d and d in (d) show the corresponding FT images of zone d and d.

Image of FIG. 2.
FIG. 2.

Ultraviolet Raman spectra of the as-deposited and 1000 °C annealed samples.

Image of FIG. 3.
FIG. 3.

Visible Raman spectra of the as-deposited and 1000 °C annealed samples.

Image of FIG. 4.
FIG. 4.

The SIMS depth profile of H, B and Si at positive ion collection mode. The red line is for the as-deposited sample and the black line is for the 1000 °C annealed sample, respectively. The inset is the SIMS depth profile of B at positive ion collection mode.

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/content/aip/journal/jap/114/2/10.1063/1.4813134
2013-07-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced p-type conduction of B-doped nanocrystalline diamond films by high temperature annealing
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4813134
10.1063/1.4813134
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