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Tunability of InGaN/GaN quantum well light emitting diodes through current
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10.1063/1.4813225
/content/aip/journal/jap/114/2/10.1063/1.4813225
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4813225

Figures

Image of FIG. 1.
FIG. 1.

Transition energy as a function of current density.

Image of FIG. 2.
FIG. 2.

Field distribution in and around the QW for different current densities.

Image of FIG. 3.
FIG. 3.

Conduction and valance band for different current densities. Inset shows different bending of the conduction band QW.

Tables

Generic image for table
Table I.

Parameters used in the simulation. , , and are the piezoelectric polarization, spontaneous polarization, and band gap bowing parameter, respectively. V. law stands for Vegard's law.

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/content/aip/journal/jap/114/2/10.1063/1.4813225
2013-07-12
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunability of InGaN/GaN quantum well light emitting diodes through current
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4813225
10.1063/1.4813225
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