X-ray rocking curves from (a) symmetric (002) and (b) asymmetric (110) reflection of 10 nm BaTiO3/80 nm (110)Ge structure on (110)GaAs substrate, respectively. The Pendellösung oscillations in the rocking curve confirm the high crystalline quality of the BaTiO3/Ge/(110)GaAs interface.
(a) Cross-sectional TEM micrograph of BaTiO3 layer deposited on epitaxial Ge grown on (110) GaAs substrate. (b) High-resolution TEM micrograph at the BaTiO3/(110)Ge interface.
XPS spectra of (a) Ge 3 d core level and (b) valence band maximum, VBM from epitaxial (110)Ge film, respectively.
XPS spectra of (a) Ba 4d5/2 core level and (b) VBM from 10 nm BaTiO3 film, respectively.
XPS spectra of (a) Ba 4d5/2 and (b) Ge 3 d core levels from 1 nm thin BaTiO3 film/(110)Ge interface.
Energy-band diagram of the BaTiO3/(110)Ge heterojunction obtained from XPS measurements.
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