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Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge
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10.1063/1.4813226
/content/aip/journal/jap/114/2/10.1063/1.4813226
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4813226
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray rocking curves from (a) symmetric (002) and (b) asymmetric (110) reflection of 10 nm BaTiO/80 nm (110)Ge structure on (110)GaAs substrate, respectively. The Pendellösung oscillations in the rocking curve confirm the high crystalline quality of the BaTiO/Ge/(110)GaAs interface.

Image of FIG. 2.
FIG. 2.

(a) Cross-sectional TEM micrograph of BaTiO layer deposited on epitaxial Ge grown on (110) GaAs substrate. (b) High-resolution TEM micrograph at the BaTiO/(110)Ge interface.

Image of FIG. 3.
FIG. 3.

XPS spectra of (a) Ge 3 d core level and (b) valence band maximum, VBM from epitaxial (110)Ge film, respectively.

Image of FIG. 4.
FIG. 4.

XPS spectra of (a) Ba 4d core level and (b) VBM from 10 nm BaTiO film, respectively.

Image of FIG. 5.
FIG. 5.

XPS spectra of (a) Ba 4d and (b) Ge 3 d core levels from 1 nm thin BaTiO film/(110)Ge interface.

Image of FIG. 6.
FIG. 6.

Energy-band diagram of the BaTiO/(110)Ge heterojunction obtained from XPS measurements.

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/content/aip/journal/jap/114/2/10.1063/1.4813226
2013-07-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/2/10.1063/1.4813226
10.1063/1.4813226
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