XRD patterns of nickel germano-silicide films formed with a Si0.73Ge0.27 epilayer in a temperature range of 300–900 °C.
The sheet resistance of Ni germano-silicide film as a function of annealing temperature. The inset is the SEM images of surface morphology of Ni germano- silicide formed at 600 and 800 °C.
Raman spectra measured at room temperature for the as-deposited and annealed Ni/Si0.73Ge0.27 samples at temperature ranging from 300 °C to 800 °C.
Ge content and strain status of the SiGe alloys as a function of annealing temperature.
Cross sectional TEM images and EDS line profiles for the samples annealed at 400 °C (a), and 800 °C (b) and (c), where (b) is the line profiles for the nickel germano-silicide grains, and (c) is the line profiles for the Ge-rich SiGe regions at the grain boundaries.
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