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Influence of chromium interaction with native and impurity defects on optical and luminescence properties of ZnSe:Cr crystals
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10.1063/1.4837596
/content/aip/journal/jap/114/20/10.1063/1.4837596
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/20/10.1063/1.4837596

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of ZnSe:Cr [I] (a) and ZnSe:Cr [Bi] (b) crystals in exciton spectral range at T = 6.5 K. Inset: the dependence of the ZnSe:Cr [Bi] edge band maximum position on Cr concentration.

Image of FIG. 2.
FIG. 2.

Temperature evolution of the PL bands in exciton spectral range of ZnSe [I] (a), ZnSe:Cr [I] 0.10 at. % (b), ZnSe:Cr [Bi] 0.10 at. % (c) and ZnSe:Cr (melt) 0.01 at. % (d) crystals spectra. Insets: determination of activation energy of the temperature quenching.

Image of FIG. 3.
FIG. 3.

Dependence of the ZnSe:Cr [I] 0.30 at. % crystal PL intensity on excitation power at T = 6.5 K. Inset: power function approximation of the emission maximums intensities on excitation power.

Image of FIG. 4.
FIG. 4.

Normalised PL spectra of ZnSe:Cr [I] crystals in the visible spectral range at T = 6.5 K. Inset: dependence of the emission maximums ratio on chromium concentration.

Image of FIG. 5.
FIG. 5.

Temperature evolution of the PL bands in long wavelength visible spectral range of ZnSe [I] (a), ZnSe:Cr [I] 0.30 at. % (b) crystals. Inset: dependence of the logarithm of the intensity emission in the PL bands maximums vs. the inverse temperature.

Image of FIG. 6.
FIG. 6.

Absorption spectra at T = 300 K of the ZnSe:Cr (melt) (a), ZnSe:Cr (PVT) (b), ZnSe:Cr [I] (c), and ZnSe:Cr [Bi] (d) crystals.

Image of FIG. 7.
FIG. 7.

PL spectra of the ZnSe:Cr [I] (a), ZnSe:Cr (melt) (b), and ZnSe:Cr (PVT) (c) crystals in the near-IR spectral range at T = 6.5 K. Inset: dependence of the emission intensity in the bands maximum on the Cr concentration.

Image of FIG. 8.
FIG. 8.

PL spectra of ZnSe:Cr [Bi] crystals in IR spectral range at T = 6.5 K (a) and T = 300 K (b). Inset: dependence of the emission intensity in the bands maximum on doping impurity concentration.

Image of FIG. 9.
FIG. 9.

Temperature evolution of the PL bands in IR spectra of ZnSe:Cr [Bi] 0.10 at. % crystal.

Image of FIG. 10.
FIG. 10.

Temperature evolution of the PL bands in IR spectra of ZnSe:Cr [I] 0.10 at. % (a, b) and ZnSe:Cr (melt) 0.10 at. % (c, d) crystals.

Image of FIG. 11.
FIG. 11.

Normalised PL spectra of ZnSe:Cr crystals in IR spectral range at T = 6.5 K. Inset: (a) influence of the annealing in zinc vapors on PL spectra of the ZnSe:Cr (PVT) crystal doped by diffusion from the gas phase during 80 h at T = 85 K; (b) dependence of the mid-IR band intensity in maximum (2.07 m) on the chromium doping impurity concentration at T = 295 K.

Image of FIG. 12.
FIG. 12.

PL spectra of ZnSe:Cr [I] crystals in IR spectral range at T = 6.5 K (a) and T = 300 K (b). Inset: dependence of the emission intensity in the bands maximum on doping impurity concentration.

Tables

Generic image for table
Table I.

Determination of the chromium concentration in ZnSe:Cr samples.

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/content/aip/journal/jap/114/20/10.1063/1.4837596
2013-11-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of chromium interaction with native and impurity defects on optical and luminescence properties of ZnSe:Cr crystals
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/20/10.1063/1.4837596
10.1063/1.4837596
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