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Disorder induced interface states and their influence on the Al/Ge nanowires Schottky devices
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10.1063/1.4857035
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    Affiliations:
    1 NanO LaB - Departamento de Física, Universidade Federal de São Carlos, CEP 13565-905, CP 676 São Carlos, São Paulo, Brazil
    2 Departamento de Física e Química, Faculdade de Engenharia de Guaratinguetá, Universidade Estadual Paulista Júlio de Mesquita Filho, CEP 12516-410 Guaratingueta, São Paulo, Brazil
    3 Laboratório Interdisciplinar de Eletroquímica e Cerâmicas, Departamento de Química, Universidade Federal de São Carlos, CEP 135665-905, CP 676 São Carlos, São Paulo, Brazil
    J. Appl. Phys. 114, 243705 (2013); http://dx.doi.org/10.1063/1.4857035
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/content/aip/journal/jap/114/24/10.1063/1.4857035
2013-12-26
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Disorder induced interface states and their influence on the Al/Ge nanowires Schottky devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/24/10.1063/1.4857035
10.1063/1.4857035
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