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Disorder induced interface states and their influence on the Al/Ge nanowires Schottky devices
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10.1063/1.4857035
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    Affiliations:
    1 NanO LaB - Departamento de Física, Universidade Federal de São Carlos, CEP 13565-905, CP 676 São Carlos, São Paulo, Brazil
    2 Departamento de Física e Química, Faculdade de Engenharia de Guaratinguetá, Universidade Estadual Paulista Júlio de Mesquita Filho, CEP 12516-410 Guaratingueta, São Paulo, Brazil
    3 Laboratório Interdisciplinar de Eletroquímica e Cerâmicas, Departamento de Química, Universidade Federal de São Carlos, CEP 135665-905, CP 676 São Carlos, São Paulo, Brazil
    J. Appl. Phys. 114, 243705 (2013); http://dx.doi.org/10.1063/1.4857035
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http://aip.metastore.ingenta.com/content/aip/journal/jap/114/24/10.1063/1.4857035
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Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of as grown Ge nanowires showing diameters between 80 and 240 nm and lengths of tens of micrometers. (b) XRD pattern of Ge nanowires samples, agreeing with PDF 4-545 where the cubic structure of germanium is observed (the small peak at ∼26° represents the contribution of GeO oxide). (c) EDS spectrum on nanowires is showed in (a) confirming the negligible GeO oxide quantity. (d) HRTEM image of a single nanowire showing a thin oxide layer (<2 nm) and the important crystallographic planes. The lattice spacing was found to be 0.32 nm, corresponding to the (111) plane family. Lattice fringes formed an angle of 54° with the nanowire's growth axis so that the growth direction of the nanowire was found to be along [110]. In the inset, a low resolution image of the nanowire is depicted.

Image of FIG. 2.
FIG. 2.

(a) Temperature-dependent resistance curve revealing a semiconductor behaviour and the corresponding fitting for the VRH mechanism (inset). (b) Current-voltage curves for different temperatures used to determine the Schottky barrier height, using the back-to-back model. The fitting for 400 K is shown in the inset. (c) The equivalent electrical circuit for the back-to-back model. (d) Sketch of the experimental device with aluminium contacts over Ge nanowires layer on Si/SiO substrate.

Image of FIG. 3.
FIG. 3.

In panels (a) and (b) are shown the conduction band energy profile in x-y plane far from the depletion region produced by the Schottky contact at z = 0 (out of the page) and at 300 K. The effects of the interface states are readily observed in the nearby surface region. (c) The conduction band energy profile in the x direction for different interface states density also at 300 K. The energy around z = 0 is the effective Schottky barrier. (d) Comparison between the theoretical and experimental Schottky barriers for different temperatures and interface states densities.

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/content/aip/journal/jap/114/24/10.1063/1.4857035
2013-12-26
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Disorder induced interface states and their influence on the Al/Ge nanowires Schottky devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/24/10.1063/1.4857035
10.1063/1.4857035
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