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/content/aip/journal/jap/114/24/10.1063/1.4859576
1.
1. U. K. Mishra, L. Shen, T. E. Kazior, and Y. F. Wu, Proc. IEEE 96, 287 (2008).
http://dx.doi.org/10.1109/JPROC.2007.911060
2.
2. H. Kambayashi, Y. Satoh, S. Ootomo, T. Kokawa, T. Nomura, S. Kato, and T. P. Chow, Solid-State Electron. 54, 660 (2010).
http://dx.doi.org/10.1016/j.sse.2010.01.001
3.
3. M. Kanamura, T. Ohki, T. Kikkawa, K. Imanishi, T. Imada, A. Yamada, and N. Hara, IEEE Electron Device Lett. 31, 189 (2010).
http://dx.doi.org/10.1109/LED.2009.2039026
4.
4. J. Kashiwagi, T. Fujiwara, M. Akutsu, N. Ito, K. Chikamatsu, and K. Nakahara, IEEE Electron Device Lett. 34, 1109 (2013).
http://dx.doi.org/10.1109/LED.2013.2272491
5.
5. Z. Tang, Q. Jiang, Y. Lu, S. Huang, S. Yang, X. Tang, and K. J. Chen, IEEE Electron Device Lett. 34, 1373 (2013).
http://dx.doi.org/10.1109/LED.2013.2279846
6.
6. T. Hashizume, S. Ootomo, T. Inagaki, and H. Hasegawa, J. Vac. Sci. Technol. B 21, 1828 (2003).
http://dx.doi.org/10.1116/1.1585077
7.
7. T. Hashizume, S. Ootomo, and H. Hasegawa, Appl. Phys. Lett. 83, 2952 (2003).
http://dx.doi.org/10.1063/1.1616648
8.
8. D. Gregušová, R. Stoklas, K. Čičo, T. Lalinský, and P. Kordoš, Semicond. Sci. Technol. 22, 947 (2007).
http://dx.doi.org/10.1088/0268-1242/22/8/021
9.
9. E. Miyazaki, Y. Goda, S. Kishimoto, and T. Mizutani, Solid-State Electron. 62, 152 (2011).
http://dx.doi.org/10.1016/j.sse.2011.04.017
10.
10. J. Robertson and B. Falabretti, Mater. Sci. Eng. B 135, 267 (2006).
http://dx.doi.org/10.1016/j.mseb.2006.08.017
11.
11. Y. Hori, C. Mizue, and T. Hashizume, Jpn. J. Appl. Phys., Part 1 49, 080201 (2010).
http://dx.doi.org/10.1143/JJAP.49.080201
12.
12. X. Liu, R. Yeluri, J. Lu, and U. K. Mishra, J. Electron. Mater. 42, 33 (2013).
http://dx.doi.org/10.1007/s11664-012-2246-8
13.
13. C. M. Jackson, A. R. Arehart, E. Cinkilic, B. McSkimming, J. S. Speck, and S. A. Ringel, J. Appl. Phys. 113, 204505 (2013).
http://dx.doi.org/10.1063/1.4808093
14.
14. C. Mizue, Y. Hori, M. Miczek, and T. Hashizume, Jpn. J. Appl. Phys., Part 1 50, 021001 (2011).
http://dx.doi.org/10.1143/JJAP.50.021001
15.
15. S. Huang, S. Yang, J. Roberts, and K. J. Chen, Jpn. J. Appl. Phys., Part 1 50, 110202 (2011).
http://dx.doi.org/10.1143/JJAP.50.110202
16.
16. Z. Yatabe, Y. Hori, S. Kim, and T. Hashizume, Appl. Phys. Express 6, 016502 (2013).
http://dx.doi.org/10.7567/APEX.6.016502
17.
17. M. Ťapajna, M. Jurkovič, L. Válik, Š. Haščík, D. Gregušová, F. Brunner, E.-M. Cho, and J. Kuzmík, Appl. Phys. Lett. 102, 243509 (2013).
http://dx.doi.org/10.1063/1.4811754
18.
18. Y. Hori, C. Mizue, and T. Hashizume, Phys. Status Solidi C 9(6), 1356 (2012).
http://dx.doi.org/10.1002/pssc.201100656
19.
19. M. Miczek, C. Mizue, T. Hashizume, and B. Adamowicz, J. Appl. Phys. 103, 104510 (2008).
http://dx.doi.org/10.1063/1.2924334
20.
20. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (John Wiley & Sons, Inc., New Jersey, 2003), p. 325.
21.
21. M. Fagerlind, F. Allerstam, E. Ö. Sveinbjörnsson, N. Rorsman, A. Kakanakova-Georgieva, A. Lundskog, U. Forsberg, and E. Janzén, J. Appl. Phys. 108, 014508 (2010).
http://dx.doi.org/10.1063/1.3428442
22.
22. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices Third Edition (John Wiley & Sons, Inc., New Jersey, 2007), p. 215.
23.
23. K. Ooyama, K. Sugawara, S. Okuzaki, H. Taketomi, H. Miyake, K. Hiramatsu, and T. Hashizume, Jpn. J. Appl. Phys., Part 1 49, 101001 (2010).
http://dx.doi.org/10.1143/JJAP.49.101001
24.
24. A. Uedono, S. Ishibashi, S. Keller, C. Moe, P. Cantu, T. M. Katona, D. S. Kamber, Y. Wu, E. Letts, S. A. Newman, S. Nakamura, J. S. Speck, U. K. Mishra, S. P. DenBaars, T. Onuma, and S. F. Chichibu, J. Appl. Phys. 105, 054501 (2009).
http://dx.doi.org/10.1063/1.3079333
25.
25. F. Conzález-Posada, J. A. Bardwell, S. Moisa, S. Haffouz, H. Tang, A. F. Braña, and E. Muñoz, Appl. Surf. Sci. 253, 6185 (2007).
http://dx.doi.org/10.1016/j.apsusc.2007.01.016
26.
26. M. Higashiwaki, S. Chowdhury, B. L. Swenson, and U. K. Mishra, Appl. Phys. Lett. 97, 222104 (2010).
http://dx.doi.org/10.1063/1.3522649
27.
27. B. Brennan, X. Qin, H. Dong, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 101, 211604 (2012).
http://dx.doi.org/10.1063/1.4767520
28.
28. P. Sivasubramani, T. J. Park, B. E. Coss, A. Lucero, J. Huang, B. Brennan, Y. Cao, D. Jena, H. Xing, R. M. Wallace, and J. Kim, Phys. Status Solidi RRL 6, 22 (2012).
http://dx.doi.org/10.1002/pssr.201105417
29.
29. N. Shiozaki and T. Hashizume, J. Appl. Phys. 105, 064912 (2009).
http://dx.doi.org/10.1063/1.3079502
30.
30. C. Bae, G. B. Rayner, and G. Lucovsky, Appl. Surf. Sci. 216, 119 (2003).
http://dx.doi.org/10.1016/S0169-4332(03)00497-5
31.
31. M. Tajima, J. Kotani, and T. Hashizume, Jpn. J. Appl. Phys., Part 1 48, 020203 (2009).
http://dx.doi.org/10.1143/JJAP.48.020203
32.
32. G. V. Soares, K. P. Bastos, R. P. Pezzi, L. Miotti, C. Driemeier, I. J. R. Baumvol, C. Hinkle, and G. Lucovsky, Appl. Phys. Lett. 84, 4992 (2004).
http://dx.doi.org/10.1063/1.1763230
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/content/aip/journal/jap/114/24/10.1063/1.4859576
2013-12-27
2016-09-30

Abstract

We have investigated the relationship between improved electrical properties of AlO/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) and electronic state densities at the AlO/AlGaN interface evaluated from the same structures as the MOS-HEMTs. To evaluate AlO/AlGaN interface state densities of the MOS-HEMTs, two types of capacitance-voltage () measurement techniques were employed: the photo-assisted measurement for the near-midgap states and the frequency dependent characteristics for the states near the conduction-band edge. To reduce the interface states, an NO-radical treatment was applied to the AlGaN surface just prior to the deposition of the AlO insulator. As compared to the sample without the treatment, the NO-radical treated AlO/AlGaN/GaN structure showed smaller frequency dispersion of the curves in the positive gate bias range. The state densities at the AlO/AlGaN interface were estimated to be 1 × 1012 cm−2 eV−1 or less around the midgap and 8 × 1012 cm−2 eV−1 near the conduction-band edge. In addition, we observed higher maximum drain current at the positive gate bias and suppressed threshold voltage instability under the negative gate bias stress even at 150 °C. Results presented in this paper indicated that the NO-radical treatment is effective both in reducing the interface states and improving the electrical properties of the AlO/AlGaN/GaN MOS-HEMTs.

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