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Linear thermal expansion coefficient determination using in situ curvature and temperature dependent X-ray diffraction measurements applied to metalorganic vapor phase epitaxy-grown AlGaAs
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10.1063/1.4812369
/content/aip/journal/jap/114/3/10.1063/1.4812369
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/3/10.1063/1.4812369

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the curvature measurement setup. The wafer is mounted on a graphite wafer holder called “satellite.”

Image of FIG. 2.
FIG. 2.

Measured curvature change during heat-up due to bowing of the substrate caused by the temperature gradient between heated wafer back side and cooled wafer front side. The samples S3 and S4 are described in Table I .

Image of FIG. 3.
FIG. 3.

Comparison of room temperature curvature for sample S1 with lattice plane bow measured by XRD and surface bow by laser deflectometry.

Image of FIG. 4.
FIG. 4.

Measured (symbols) XRD scans for samples S1 (AlGaAs) (a) and S3 (AlGaAs) (b) measured at different temperatures. The solid curves represent simulated scans at RT.

Image of FIG. 5.
FIG. 5.

Calculated temperature dependent lattice mismatch based on the scans from Fig. 4 using Eqs. (1) and (15) . The given values for were calculated using Eq. (14) .

Image of FIG. 6.
FIG. 6.

curvature transients of samples S1, S2 (AlGaAs) (a) and S3, S4 (AlGaAs).

Image of FIG. 7.
FIG. 7.

Extracted curvature values from Fig. 6 plotted against wafer temperature for samples S1, S2 (a) and S3, S4 (b) (Note: lines were added as guide for the eyes only).

Image of FIG. 8.
FIG. 8.

Determined values for the thermal expansion coefficient from the curvature characteristics from Fig. 7 according to Eqs. (10) and (9) (Note: lines were added as guide for the eyes only).

Image of FIG. 9.
FIG. 9.

Comparison of the values for the thermal expansion coefficient obtained in this work with values from literature.

Tables

Generic image for table
Table I.

Overview of sample parameters.

Generic image for table
Table II.

Comparison of the obtained values for thermal expansion coefficients from T-XRD, change of curvature with layer thickness and change of curvature with temperature.

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/content/aip/journal/jap/114/3/10.1063/1.4812369
2013-07-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Linear thermal expansion coefficient determination using in situ curvature and temperature dependent X-ray diffraction measurements applied to metalorganic vapor phase epitaxy-grown AlGaAs
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/3/10.1063/1.4812369
10.1063/1.4812369
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