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Engineered core-shell Si1−xGex/Ge nanowires fabricated by focused ion beam and oxido-reduction
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Image of FIG. 1.
FIG. 1.

Schematic representation of the fabrication process from upper to lower: SiGe relaxed buffer layer/Si(001) substrate; FIB milling of SiGe wires (200 nm < ϕ < 300 nm). (c) RTO of the wires; (d) chemical oxide removal. The two last steps (oxidation/etching) produce the Ge pile up on the shell of the NWs.

Image of FIG. 2.
FIG. 2.

Evolution of the wires shape with the milling conditions. After the first milling step at 0°, a second step was performed from left to right: at normal incidence (0°), 33° from normal or 38° from normal. Directions of milling are indicated by arrows.

Image of FIG. 3.
FIG. 3.

SEM image of the periodic array of NWs with an aspect ratio about ∼1 obtained by a two step FIB milling (at 0° and 38°) of a fully relaxed SiGe pseudo-substrate capped with a Pt layer before milling.

Image of FIG. 4.
FIG. 4.

TEM cross-section images of SiO/Ge/SiO/Ge/SiGe NWs produced by the combination of FIB milling and condensation process. The core-shell configuration was produced by two thermal oxidation/etching cycles with RTO performed at 1000 °C for 2 min.

Image of FIG. 5.
FIG. 5.

TEM cross-section images of the NWs after RTO at 750 °C during 120 min: (a) large view image of NWs periodicity and size homogeneity; (b) higher magnification image and corresponding EDS filtered image of the Ge-L edge.

Image of FIG. 6.
FIG. 6.

TEM cross-sectional images of periodic array of NWs perfectly homogeneous in size. The nanofabrication process involves mainly two steps: (i) LMAIS-FIB milling and (ii) a thermal oxidation/etching cycle with RTO performed at 750 °C for 120 min. (a) Gives an overall view of the NWs. The inset gives an EELS filtered image of the Ge distribution; (b) gives a higher magnification image of one NW which evidences the reproducible SiO/Ge/SiGe core-shell configuration.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Engineered core-shell Si1−xGex/Ge nanowires fabricated by focused ion beam and oxido-reduction