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Hysteresis in the conductance of asymmetrically biased GaAs quantum point contacts with in-plane side gates
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10.1063/1.4813506
/content/aip/journal/jap/114/3/10.1063/1.4813506
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/3/10.1063/1.4813506
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Three-dimensional AFM image of a QPC with two side gates (G1 and G2) fabricated with chemical wet-etching technique. An asymmetric Lateral Spin Orbit Coupling (LSOC) is generated using an asymmetric bias between the two side gates. The narrow portion of the QPC has a width and length around 350 nm and 275 nm, respectively.

Image of FIG. 2.
FIG. 2.

Conductance of a QPC (in units of 2 ) as a function of the sweep voltage applied to the side gates. The measurements include forward and reverse sweeps of . The sweep voltage is superimposed on the potentials and applied to the gates to create an asymmetry. The potential applied to gate G1 is fixed at 0 V. The potential on gate G2 is, from left to right, 0, 0.6, 1.2, 1.8, 2.4, 3.0, 3.6, and 4.2 V.

Image of FIG. 3.
FIG. 3.

Conductance of a QPC (in units of 2 ) as a function of the sweep voltage applied to the side gates. The measurements include forward and reverse sweeps of . The sweep voltage is superimposed on the potentials and applied to the gates to create an asymmetry. The potential applied to gate G1 is fixed at 1.5 V. The potential on gate G2 is, from left to right, 0.3, 0.9, 1.5, 2.1, and 2.7 V.

Image of FIG. 4.
FIG. 4.

(Top) Schematic illustration of the QPC geometrical layout used in the NEGF simulations. (Bottom) Influence of dangling bond scattering on the hysteresis of the conductance (in units of ) of a GaAs QPC calculated as a function of the common mode signal applied to the two in-plane SGs. The solid and dashed curves correspond to the forward and reverse sweeps, respectively. The two different set of curves labeled I and II correspond to the biasing conditions on the gates: (I)  = 0.2 V +  and  = −0.2 V +  and (II)  = −0.2 V +  and  = 0.2 V +  . The temperature is set equal to 4.2 K and the device dimensions are  = 32 nm,  =  + 32 nm,  = 16 nm, and  = 48 nm. The following parameters were used: V = 0.1 mV, T = 4.2 K, γ = 3.7 in units of , and β = 5 Å. A dangling bond is located in the narrow portion of the QPC at (x,y) = (  +  ,  +  ) with strength equal to 200 meV. Also shown for comparisons are the conductance curves calculated without a dangling bond present (curves labeled “”). The curves for the biasing configuration II have been shifted by −0.1 V for clarity.

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/content/aip/journal/jap/114/3/10.1063/1.4813506
2013-07-15
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hysteresis in the conductance of asymmetrically biased GaAs quantum point contacts with in-plane side gates
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/3/10.1063/1.4813506
10.1063/1.4813506
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