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Evidence of two sensitization processes of Nd3+ ions in Nd-doped SiOx films
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10.1063/1.4813610
/content/aip/journal/jap/114/3/10.1063/1.4813610
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/3/10.1063/1.4813610
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The PL spectra of SiO films annealed at the indicative temperature with 1 min duration. The left (a) corresponds to T lower than 1000 °C while the right (b) to high T higher than 1000 °C. AD is the abbreviation of as-deposited.

Image of FIG. 2.
FIG. 2.

Peak intensity (left scale) and position (right scale) of SiO films versus T.

Image of FIG. 3.
FIG. 3.

E and E peak intensity versus t for SiO films annealed at 750 °C (left scale) and 1100 °C (right scale), respectively.

Image of FIG. 4.
FIG. 4.

RAMAN spectra of the SiO films deposited on quartz substrate and annealed at indicated T for 1 min.

Image of FIG. 5.
FIG. 5.

FTIR spectra recorded at Brewster angle of 65° for SiO films deposited on a Si wafer and annealed at indicated T during 1 min. The spectra were normalized with respect to the TO band intensity.

Image of FIG. 6.
FIG. 6.

PL spectra of Nd-SiO and SiO films annealed at 750 °C during (a) 1 min and (b) 1 h.

Image of FIG. 7.
FIG. 7.

Integrated peak intensities of Nd-SiO and SiO films annealed at 750 °C versus t.

Image of FIG. 8.
FIG. 8.

PL spectra of Nd-SiO and SiO films annealed for 1 min at 1100 °C.

Image of FIG. 9.
FIG. 9.

Evolution of Nd PL intensity as a function of T for Nd-SiO films annealed during 1 min.

Image of FIG. 10.
FIG. 10.

Evolution of PL lifetimes measured on peak E and E versus T for 1 min-annealed SiO and Nd-SiO films detected at the maximum point of each peak. The inset shows the PL decay curves for SiO films annealed at 750 and 1100 °C.

Image of FIG. 11.
FIG. 11.

Evolution of Nd PL lifetime at 920 nm versus T. The inset (a) is a representative decay rate of 750 °C Nd-SiO PL, fitted by a two-exponential decay model, while the inset (b) is the component of Nd fast or slow lifetime.

Image of FIG. 12.
FIG. 12.

Schematic illustrations of the Nd ions excitation. (i) Energy diagrams of ASSs and defects within the films annealed at T < 1000 °C, (ii) (a) energy diagram of Nd ions and (b) absorption spectrum of Nd ions doped in SiO film, and (iii) energy diagram of Si-ncs within the films annealed at T > 1000 °C. ET is the abbreviation of energy transfer.

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/content/aip/journal/jap/114/3/10.1063/1.4813610
2013-07-16
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evidence of two sensitization processes of Nd3+ ions in Nd-doped SiOx films
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/3/10.1063/1.4813610
10.1063/1.4813610
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