The PL spectra of SiOx films annealed at the indicative temperature with 1 min duration. The left (a) corresponds to TA lower than 1000 °C while the right (b) to high TA higher than 1000 °C. AD is the abbreviation of as-deposited.
Peak intensity (left scale) and position (right scale) of SiOx films versus TA.
EL and EH peak intensity versus tA for SiOx films annealed at 750 °C (left scale) and 1100 °C (right scale), respectively.
RAMAN spectra of the SiOx films deposited on quartz substrate and annealed at indicated TA for 1 min.
FTIR spectra recorded at Brewster angle of 65° for SiOx films deposited on a Si wafer and annealed at indicated TA during 1 min. The spectra were normalized with respect to the TO3 band intensity.
PL spectra of Nd-SiOx and SiOx films annealed at 750 °C during (a) 1 min and (b) 1 h.
Integrated peak intensities of Nd-SiOx and SiOx films annealed at 750 °C versus tA.
PL spectra of Nd-SiOx and SiOx films annealed for 1 min at 1100 °C.
Evolution of Nd3+ PL intensity as a function of TA for Nd-SiOx films annealed during 1 min.
Evolution of PL lifetimes measured on peak EL and EH versus TA for 1 min-annealed SiOx and Nd-SiOx films detected at the maximum point of each peak. The inset shows the PL decay curves for SiOx films annealed at 750 and 1100 °C.
Evolution of Nd3+ PL lifetime at 920 nm versus TA. The inset (a) is a representative decay rate of 750 °C Nd-SiOx PL, fitted by a two-exponential decay model, while the inset (b) is the component of Nd3+ fast or slow lifetime.
Schematic illustrations of the Nd3+ ions excitation. (i) Energy diagrams of ASSs and defects within the films annealed at TA < 1000 °C, (ii) (a) energy diagram of Nd3+ ions and (b) absorption spectrum of Nd3+ ions doped in SiO2 film, and (iii) energy diagram of Si-ncs within the films annealed at TA > 1000 °C. ET is the abbreviation of energy transfer.
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