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Optoelectronic properties of p-i-n heterojunctions based on germanium nanocrystals
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Image of FIG. 1.
FIG. 1.

(a) Integrated setup for NCs and coating deposition. (b) Illustration of the crystalline nature of the Ge NCs with an HRTEM image and a diffraction pattern exhibiting rings corresponding to the Ge diamond-type structure. (c) Schematic of the p-i-n device structure.

Image of FIG. 2.
FIG. 2.

TEM observations. (a), (b), (d), and (e) bright field image of samples BL1 and BL2, respectively. (c) and (f) corresponding chemical mapping of Zn atoms of samples BL1 and BL2, respectively.

Image of FIG. 3.
FIG. 3.

EQE, IQE, and reflectance curves measured on BL1 (a) and BL2 sample (b).

Image of FIG. 4.
FIG. 4.

Penetration depth into Ge NCs stacking versus light wavelength.

Image of FIG. 5.
FIG. 5.

Dark and one-sun illuminated IV characteristics measured on sample BL1 (a) and on sample BL2 (b). The equivalent circuit model of solar cells used is shown in the inset of (b).

Image of FIG. 6.
FIG. 6.

Deduced one-sun current density versus external voltage applied on sample BL2.

Image of FIG. 7.
FIG. 7.

Numerical simulation giving the mapping of recombination rate in a device structure equivalent to sample BL2. In inset, deduced Voc dependence with carrier lifetime.


Generic image for table
Table I.

One-sun illuminated and dark parameters of the two samples.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optoelectronic properties of p-i-n heterojunctions based on germanium nanocrystals