A representative typical fitting of microstructure parameters using BEMA is shown for measurement carried out at room temperature. Filled symbols are the experimental data while the hollow symbols are from the fitting to the data.
Thickness of surface roughness, its void fraction, and void fraction in Ag+ voids layer computed from BEMA analysis for all measurement temperatures.
Real (ε 1) and imaginary (ε 2) parts of the dielectric function as a function of incident energy shown for 300 K (experimental and DFT calculated). The rising edge at ∼3.25 eV in the calculated data is due to the interband transition at the L edge.
Temperature dependence of the measured (a) ε 1 and (b) ε 2 as a function of incident energy E.
(a) Total and orbital decomposed DOS for Ag atom. Only the d-orbitals contribute to the DOS at Fermi level significantly. Inset shows the DOS in the vicinity of Fermi level. We see that the s, p, and d orbitals contribute to the DOS at EF. (b) Changes in total DOS with respect to the temperature. Data for 0 K and 600 K are shown. Very small changes are observed in the DOS near the Fermi level.
Band structure of Ag at 0 K (black solid lines) and 600 K (red solid lines). It is seen clearly that all bands shift downwards as the temperature increases, leading to the shifts observed in optical transitions near the L edge.
Real and imaginary parts of the calculated (DFT) dielectric constant versus energy for 0 K, 300 K, 400 K, 500 K, and 600 K. (a) Shows the dielectric behavior without taking intra-band contributions into account and (b) shows the behavior when we take intra-band contributions into account. The character of the real part changes fully due to the exponential increase in absorption at lower energies. We have used a scissors operator of 0.35 eV for matching the calculated optical behavior with the experiments.
Variation of onset of composite interband transition with temperature T.
Plot of −ε 1 with λ 2. The continuous lines are the linear fitting as per Eq. (5) .
Behavior of ωpu with temperature. Inset shows the variation of ωpu with void fraction in silver layer.
Dependence of 1/τ with E 2 fitted based on Eq. (7) shown for two representative measurements (300 K and 650 K).
Behavior of 1/τ 0 and β with temperature.
ELF as a function of energy calculated from the experimentally obtained ε 1 and ε 2 for different temperatures.
Variation of experimentally obtained ELF peak, ωs and onset of transition with T.
Calculated (FP-LAPW) ELF at various temperatures taking the intra-band contributions into account.
Article metrics loading...
Full text loading...