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Thermochromic VO2 nanorods made by sputter deposition: Growth conditions and optical modeling
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10.1063/1.4813876
/content/aip/journal/jap/114/3/10.1063/1.4813876
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/3/10.1063/1.4813876

Figures

Image of FIG. 1.
FIG. 1.

Target–substrate geometry and provisions for gas inlet into the sputter chamber.

Image of FIG. 2.
FIG. 2.

Experimental (circles) and simulated (dotted curves) RBS data for four VO samples grown under the conditions stated in Table I .

Image of FIG. 3.
FIG. 3.

Scanning electron micrographs (top views) for VO samples 1–6 grown under the conditions stated in Table I . Note that the magnification of samples 1–4 is different from that of samples 5 and 6.

Image of FIG. 4.
FIG. 4.

Scanning electron micrographs for VO samples 7–10 grown under the conditions stated in Table I . Left-hand, middle, and right-hand columns refer to top views, imaging at 70° between electron beam and sample normal, and cross-sectional views, respectively. Note that the magnifications differ among the various images.

Image of FIG. 5.
FIG. 5.

Panels (a) and (b) show scanning electron micrographs (cross-sectional views) for VO sample 11, grown under the conditions stated in Table I , and provides an overview image as well as a magnification of the substrate and the lower part of some of the nanowires, respectively. Note that the magnifications are different for these two images. Panel (c) is a schematic rendition of the investigated sample.

Image of FIG. 6.
FIG. 6.

Glancing incidence X-ray diffractograms taken at room temperature for VO-based samples grown under the conditions stated in Table I . The diffraction features are assigned to the shown () planes in monoclinic VO.

Image of FIG. 7.
FIG. 7.

Experimental spectral total transmittance (a) and reflectance (b) for VO-based samples, grown under the conditions given in Table I , in semiconducting and metallic states.

Image of FIG. 8.
FIG. 8.

Spectral diffuse reflectance and transmittance for VO-based samples grown under the conditions stated in Table I . Data were taken at room temperature.

Image of FIG. 9.
FIG. 9.

Complex dielectric function,  ≡   +  , of VO determined from sample 1 grown under the conditions stated in Table I . Upper and lower panels refer to semiconducting and metallic states, respectively. Also shown are data from the literature, specifically from Verleur (Ref. ), Tazawa (Ref. ), Kakiuchida (Ref. ), Mlyuka (Ref. ) and Kana Kana (Ref. ).

Image of FIG. 10.
FIG. 10.

Spectral absorptance for VO-based samples in semiconducting and metallic states. Panel (a) shows experimental data for samples grown under the conditions stated in Table I , and panel (b) reports data obtained from the theoretical model computations and using model parameters given in Table II .

Image of FIG. 11.
FIG. 11.

Spectral absorptance measured for VO-based sample 7, grown under the conditions shown in Table I , and obtained from the theoretical model computations and using , , , and given in Table II together with the shown values of  =  = . Panels (a) and (b) refer to semiconducting and metallic states, respectively. The experimental data were shown also in Fig. 10 .

Image of FIG. 12.
FIG. 12.

Spectral absorptance measured for VO-based sample 7, grown under the conditions shown in Table I , and obtained from the theoretical model computations and using the model parameters given in Table II (marked as “double layer on glass”). Also reported are computational results for a 125-nm-thick base layer on glass, a 125-nm-thick top layer alone, a 137-nm-thick film (with the total amount of VO encompassed by the double layer model) having the same structure as the base layer. Panels (a) and (b) refer to semiconducting and metallic states, respectively. The experimental data were shown also in Fig. 10 .

Tables

Generic image for table
Table I.

Fabrication parameters and morphology of VO samples. Gas inlets (a)–(c) refer to Fig. 1 . Samples indicated by bold sample numbers were subjected to detailed analysis, including optical modeling.

Generic image for table
Table II.

Parameters for structural models of VO-based samples grown under the conditions stated in Table I . , , and denote thickness, filling factor, and aspect ratio, respectively, for top () and base () layers.

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/content/aip/journal/jap/114/3/10.1063/1.4813876
2013-07-17
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermochromic VO2 nanorods made by sputter deposition: Growth conditions and optical modeling
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/3/10.1063/1.4813876
10.1063/1.4813876
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