PL spectra from the GaP epilayer before implantation and from sample S1 annealed at 600 °C. Lines A and S, respectively, correspond to emission from excitons bound to single nitrogen atoms and neutral sulfur donors, which are both present in the epilayer before implantation. Lines labelled correspond to emission from excitons bound to various nitrogen configurations. LO and TO are phonon replica of line A.
Arrhenius plot of the integrated luminescence intensity of A, and measured at 12 K for sample S1 after successive 15 s anneals at temperatures ranging from 400 to 950 °C. The measured intensities were multiplied by the normalisation factors shown. The dashed line is a fit of dyads activation energy and thick lines represent fitted intensities for the thermally activated dissociation of dyads. The inset shows the activation energies as function of the interatomic spacing of the dyads.
Spatially resolved PL intensity from single nitrogen dyads taken at 4 K. The maps are acquired at (a) 2261.6 meV, (b) 2287.9 meV, (c) 2298.5 meV and (d) 2305.4 meV, corresponding to, respectively, , and .
(a) Polarization resolved PL spectra of a dyad taken at 30 and 120° with respect to the  direction. Four linearly polarized transitions, labelled E1–E4 are observed. (b) Luminescence intensity from the same dyad as a function of the linear polarization angle and the energy.
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