1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Photoluminescence from single nitrogen isoelectronic centers in gallium phosphide produced by ion implantation
Rent:
Rent this article for
USD
10.1063/1.4815883
/content/aip/journal/jap/114/3/10.1063/1.4815883
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/3/10.1063/1.4815883
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra from the GaP epilayer before implantation and from sample S1 annealed at 600 °C. Lines A and S, respectively, correspond to emission from excitons bound to single nitrogen atoms and neutral sulfur donors, which are both present in the epilayer before implantation. Lines labelled correspond to emission from excitons bound to various nitrogen configurations. LO and TO are phonon replica of line A.

Image of FIG. 2.
FIG. 2.

Arrhenius plot of the integrated luminescence intensity of A, and measured at 12 K for sample S1 after successive 15 s anneals at temperatures ranging from 400 to 950 °C. The measured intensities were multiplied by the normalisation factors shown. The dashed line is a fit of dyads activation energy and thick lines represent fitted intensities for the thermally activated dissociation of dyads. The inset shows the activation energies as function of the interatomic spacing of the dyads.

Image of FIG. 3.
FIG. 3.

Spatially resolved PL intensity from single nitrogen dyads taken at 4 K. The maps are acquired at (a) 2261.6 meV, (b) 2287.9 meV, (c) 2298.5 meV and (d) 2305.4 meV, corresponding to, respectively, , and .

Image of FIG. 4.
FIG. 4.

(a) Polarization resolved PL spectra of a dyad taken at 30 and 120° with respect to the [110] direction. Four linearly polarized transitions, labelled E1–E4 are observed. (b) Luminescence intensity from the same dyad as a function of the linear polarization angle and the energy.

Loading

Article metrics loading...

/content/aip/journal/jap/114/3/10.1063/1.4815883
2013-07-17
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence from single nitrogen isoelectronic centers in gallium phosphide produced by ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/3/10.1063/1.4815883
10.1063/1.4815883
SEARCH_EXPAND_ITEM