(a) and (b) are the 3D plots of the PL intensity versus excitation and emission wavelengths of Bi doped porous silica annealed in N2 and air. (c) Normalized visible to NIR PL spectra of Bi doped porous silica under the various excitation wavelengths.
Excitation wavelengths dependence of PL intensity of the sample annealed in N2 at 1300 °C. Scale up the intensity of PL for 1150 nm.
(a) NIR PL spectra of the sample at various annealing temperatures 1100–1300 °C in N2 gas. (b) and (c) are the normalized spectra of NIR PL bands.
XPS spectra of Bi doped porous silica annealed in N2 from 1100 to 1300 °C.
(a) NIR PL spectra upon photo-excitation with a wavelength of 488 nm at various temperatures 10–300 K of the sample annealed in N2 at 1300 °C. (b) Temperature dependence of integrated intensity of the two Gaussian peaks at 1270 and 1420 nm in (a).
(a) Decay curves of the sample annealed in N2 at 1300 °C measured at 8 and 300 k, detection and excitation wavelengths are 1450 and 488 nm, respectively. (b) Temperature dependence of slow component's lifetimes at various detection wavelengths under the excitation wavelength of 488 nm.
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