Nanosized p-i-n diode.
Band profile for the conduction and valence bands. Brown line indicates Fermi level.
Spatial distribution of hole and electron current at at zero bias for p-i-n structure. One can see that total current is conserved.
Energetic current distribution over valence and conduction bands at at zero bias for p-i-n structure.
Photoresponse at zero bias for p-i-n structure with and without photon-assisted (Franz-Keldysh effect) tunneling.
Local density of states. (a) LDOS plot (x-axis is position in nm, y-axis is energy in eV) and (b) cross sections of the LDOS. Main graph is the spatial LDOS near the top of the valence band. Inset is the cross section over energy coordinate near the middle of the device.
IV characteristics at . Please note that the current sign is taken opposite of the original one (originally current flow taken positive from p lead to n lead).
2D distribution spectral current for six different photon energies. x-axis units are nm, y-units are eV. Colormap units correspond to nA/eV.
Spatial distribution of hole and electron currents at eV, eV, and eV.
Current vs. number of off-diagonals at at zero bias for p-i-n structure at I = 130 . Blue line corresponds to full matrix N = 139.
Effect of number of off-diagonals on the 2D current. (a) and (b) , which is approaching full matrix rank.
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