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Defect states and disorder in charge transport in semiconductor nanowires
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) and (b) High resolution TEM images revealing single crystal structure and a thin oxide layer (2–5 nm) on the surface of the nanowire. (c)Diffraction pattern verifying the zinc-blende structure of InP nanowire. (e) High resolution TEM image optimized to enhance the Z-contrast between an ∼2 nm In-rich crystalline region at the surface of the nanowire.

Image of FIG. 2.
FIG. 2.

2-probe and 4-probe I–V measurements show that contact resistances are less than 0.05 MΩ. Left-top inset: SEM image of single nanowire FET device with 4 electrodes. Right bottom inset: vs. showing saturation current at negative gate voltage (|| is limited to less than 30 V to avoid significant leakage current).

Image of FIG. 3.
FIG. 3.

(a) Temperature dependent I–V plots and fitting to Schottky model (ideality factor ranges from 97 to 73). Inset is the semi-log plot of showing non-exponential function dependence on . Temperature is varied from 150 K to 300 K in 30 K increments. (b) A log-log plot of the same data shows linear behavior, , with slope increasing as temperature decreases (add 120 K and 100 K plots). The extrapolations of the linear fits converge to a crossover point (, solid lines taken at > 150 K). Inset is a band-structure plot of the In defect using GGA.

Image of FIG. 4.
FIG. 4.

(a) Log-log plot of ln() vs. 1/. The graph shows that there is a crossover in slope: from  = 1.03 at high temperature to  = 0.49 at low temperature ( = 0 V). Inset is a cartoon showing NNH at high temperature and ES-VRH at low temperature (see text). (b) Red dot is the low temperature slope deviating from  = 0.5 at > +9 V. Similar gate voltage dependent trends can be seen in the crossover temperature (), NNH temperature (), and ES-VRH temperature () vs. plots.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect states and disorder in charge transport in semiconductor nanowires