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Continuous wave solid phase laser annealing of single-pot electrodeposited CuInSe2 thin films: Effects of Cu/In stoichiometry
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10.1063/1.4816250
/content/aip/journal/jap/114/4/10.1063/1.4816250
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/4/10.1063/1.4816250

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the CWLA setup and the annealing chamber.

Image of FIG. 2.
FIG. 2.

SEM images of Cu-poor and Cu-rich samples in the as-ED state and after CWLA at 50 W/cm. The Cu-rich and Cu-poor films have somewhat different surface morphology and no apparent changes result from CWLA.

Image of FIG. 3.
FIG. 3.

Composition of (a) Cu-poor and (b) Cu-rich samples as measured by EDS after CWLA for varying times at 50 W/cm. Dotted lines represent composition of the films before KCN etching while solid lines show the composition after KCN etching. The Cu-poor films do not change significantly after KCN etching, while the Cu-rich films go from Cu-rich to Cu/In ≈ 1 (within estimated uncertainty). The lines serve only as a guide to the eye. The error bar for the measurements is ±2%.

Image of FIG. 4.
FIG. 4.

θ-2θ x-ray diffraction results from (a) Cu-poor and (b) Cu-rich samples annealed for varying times at 50 W/cm. Panel (c) shows the reduction in FWHM for the (112) peak after CWLA for varying times at 50 W/cm, with a greater decrease for Cu-rich samples. The lines in Fig. 4(c) serve only as a guide to the eye.

Image of FIG. 5.
FIG. 5.

Multilayer calculation of the steady-state electric field interaction of the 1064 nm laser with the Air/CuInSe/Mo/Glass stack. Shows the normalized total power dissipation density as a function of depth.

Image of FIG. 6.
FIG. 6.

Comparisons of Raman peak position and FWHM for the A vibration mode for (a) Cu-poor (Cu/In < 1) and (b) Cu-rich (Cu/In > 1) samples annealed for varying times at 50 W/cm using the 1064 nm laser. The lines serve only as a guide to the eye. The insets show the respective Raman spectra in the range from 125 to 300 cm.

Tables

Generic image for table
Table I.

Properties of the materials and other parameters used for simulating the steady state interaction of 1064 nm laser with Air/CuInSe/Mo/Glass stack. These properties are as per Refs. and .

Generic image for table
Table II.

The TC values calculated for (112), (220/204), and (312/116) diffraction planes.

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/content/aip/journal/jap/114/4/10.1063/1.4816250
2013-07-24
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Continuous wave solid phase laser annealing of single-pot electrodeposited CuInSe2 thin films: Effects of Cu/In stoichiometry
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/4/10.1063/1.4816250
10.1063/1.4816250
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