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A model of coupled thermal, mechanical, and electrostatic field effects in III-N thin film heterostructures
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10.1063/1.4816261
/content/aip/journal/jap/114/4/10.1063/1.4816261
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/4/10.1063/1.4816261

Figures

Image of FIG. 1.
FIG. 1.

Thin film heterostructure with diffused interfaces between AlN and GaN layers.

Image of FIG. 2.
FIG. 2.

(a) Transverse displacement (), (b) electrostatic potential ( ), (c) temperature ( ), and (d) valence band offset (VBO) potential for HH, LH, and crystal split CH along thickness direction for various relative temperatures (θ) prescribed at the boundaries.

Image of FIG. 3.
FIG. 3.

(a) The lowest two electron energy states (b) the highest two hole energy states for various relative temperatures.

Tables

Generic image for table
Table I.

Material properties for wurtzite AlN and GaN.

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/content/aip/journal/jap/114/4/10.1063/1.4816261
2013-07-23
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A model of coupled thermal, mechanical, and electrostatic field effects in III-N thin film heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/4/10.1063/1.4816261
10.1063/1.4816261
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