Thin film heterostructure with diffused interfaces between AlN and GaN layers.
(a) Transverse displacement (w), (b) electrostatic potential ( ), (c) temperature ( ), and (d) valence band offset (VBO) potential for HH, LH, and crystal split CH along thickness direction for various relative temperatures (θ) prescribed at the boundaries.
(a) The lowest two electron energy states (b) the highest two hole energy states for various relative temperatures.
Material properties for wurtzite AlN and GaN.
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