Schematic device structure for a quantum dot light emitting diode.
Flat band diagram for a sample device which consists of Si quantum dots, ZnO as the electron transport layer, NiO as the hole transport layer, and ohmic contacts to both anode and cathode. The horizontal lines at ends signify the metal Fermi energies for anode and cathode. Energies are in eV with respect to the vacuum level.
Discretization scheme for QD-LED focusing on the QD layers.
Carrier densities and electrostatic potential in a device with 5 QD layers (represented by dots on the plot) at equilibrium and with an applied voltage of 0.5 V.
Total device current density (log and linear) plots with increasing forward bias. The recombination current density is also plotted.
Current density vs applied voltage for different assumed values of the carrier capture coefficients (τ).
(a) Current density vs applied voltage and (b) ratio of recombination current to total current (Jrec/J) for various radiative recombination coefficients (γ).
The parameters of NiO and ZnO used for our model device.
The parameters used to describe transport in QD layers.
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