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Modeling charge transport in quantum dot light emitting devices with NiO and ZnO transport layers and Si quantum dots
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10.1063/1.4816680
/content/aip/journal/jap/114/4/10.1063/1.4816680
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/4/10.1063/1.4816680

Figures

Image of FIG. 1.
FIG. 1.

Schematic device structure for a quantum dot light emitting diode.

Image of FIG. 2.
FIG. 2.

Flat band diagram for a sample device which consists of Si quantum dots, ZnO as the electron transport layer, NiO as the hole transport layer, and ohmic contacts to both anode and cathode. The horizontal lines at ends signify the metal Fermi energies for anode and cathode. Energies are in eV with respect to the vacuum level.

Image of FIG. 3.
FIG. 3.

Discretization scheme for QD-LED focusing on the QD layers.

Image of FIG. 4.
FIG. 4.

Carrier densities and electrostatic potential in a device with 5 QD layers (represented by dots on the plot) at equilibrium and with an applied voltage of 0.5 V.

Image of FIG. 5.
FIG. 5.

Total device current density (log and linear) plots with increasing forward bias. The recombination current density is also plotted.

Image of FIG. 6.
FIG. 6.

Current density vs applied voltage for different assumed values of the carrier capture coefficients (τ).

Image of FIG. 7.
FIG. 7.

(a) Current density vs applied voltage and (b) ratio of recombination current to total current (J/J) for various radiative recombination coefficients (γ).

Tables

Generic image for table
Table I.

The parameters of NiO and ZnO used for our model device.

Generic image for table
Table II.

The parameters used to describe transport in QD layers.

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/content/aip/journal/jap/114/4/10.1063/1.4816680
2013-07-29
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling charge transport in quantum dot light emitting devices with NiO and ZnO transport layers and Si quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/4/10.1063/1.4816680
10.1063/1.4816680
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