Physical images of the “forming” process. (a) Creation of the first oxygen vacancy, (b) “Filament” formed by the avalanche in oxygen vacancy generation.
Physical image of the “reset” process. (a) Local annihilation of conductive filament, (b) Schematic band diagrams for the “forming” and “reset” conditions.
Simulated I-V characteristics of Pt/TiO2/Pt capacitor for three-different TiO2 film thickness (5 nm, 27 nm, and 50 nm).
Simulated filament images for three-different TiO2 films (5 nm, 27 nm, and 50 nm). Grey zone denotes TiO2 region and black region denotes the filament.
Projection of temperature profiles along the film thickness for three-different TiO2 film thickness (5 nm, 27 nm, and 50 nm). Film thickness is normalized.
Reset voltage dependence on pulse width of applied voltage. It is assumed that the TiO2 film is 27 nm thick.
Statistical view of simulation results. (a) Cumulative distribution of forming voltage. (b) Cumulative distribution of reset voltage.
Physical parameters assumed in simulations.
Calculated values of “forming” voltage and “reset” voltage for three-different TiO2 film thickness.
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