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Impact-ionization-based resistive transition model for thin TiO2 films
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10.1063/1.4816688
/content/aip/journal/jap/114/4/10.1063/1.4816688
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/4/10.1063/1.4816688

Figures

Image of FIG. 1.
FIG. 1.

Physical images of the “forming” process. (a) Creation of the first oxygen vacancy, (b) “Filament” formed by the avalanche in oxygen vacancy generation.

Image of FIG. 2.
FIG. 2.

Physical image of the “reset” process. (a) Local annihilation of conductive filament, (b) Schematic band diagrams for the “forming” and “reset” conditions.

Image of FIG. 3.
FIG. 3.

Simulated I-V characteristics of Pt/TiO2/Pt capacitor for three-different TiO2 film thickness (5 nm, 27 nm, and 50 nm).

Image of FIG. 4.
FIG. 4.

Simulated filament images for three-different TiO2 films (5 nm, 27 nm, and 50 nm). Grey zone denotes TiO2 region and black region denotes the filament.

Image of FIG. 5.
FIG. 5.

Projection of temperature profiles along the film thickness for three-different TiO2 film thickness (5 nm, 27 nm, and 50 nm). Film thickness is normalized.

Image of FIG. 6.
FIG. 6.

Reset voltage dependence on pulse width of applied voltage. It is assumed that the TiO2 film is 27 nm thick.

Image of FIG. 7.
FIG. 7.

Statistical view of simulation results. (a) Cumulative distribution of forming voltage. (b) Cumulative distribution of reset voltage.

Tables

Generic image for table
Table I.

Physical parameters assumed in simulations.

Generic image for table
Table II.

Calculated values of “forming” voltage and “reset” voltage for three-different TiO film thickness.

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/content/aip/journal/jap/114/4/10.1063/1.4816688
2013-07-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact-ionization-based resistive transition model for thin TiO2 films
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/4/10.1063/1.4816688
10.1063/1.4816688
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