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Extreme ultraviolet induced defects on few-layer graphene
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10.1063/1.4817082
/content/aip/journal/jap/114/4/10.1063/1.4817082
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/4/10.1063/1.4817082

Figures

Image of FIG. 1.
FIG. 1.

Comparison of the Raman spectra and the spectrum for the example exposed to EUV in a hydrogen background has the highest D peak intensity. The spectra for the samples exposed to EUV irradiation show slightly lower D peak intensity. The pristine sample has the lowest D peak intensity. Note that the spectra are separated by an offset of counts/s.

Image of FIG. 2.
FIG. 2.

ratio mapping. (b) and (c) are ratio maps for and . (a) and (d) are the EUV intensity profiles for and , respectively. The white circle indicates the mask boundary.

Image of FIG. 3.
FIG. 3.

ratio versus EUV power.

Image of FIG. 4.
FIG. 4.

(a) XPS analysis: curve fitting results for ; (b) Element concentration versus EUV power for and ; (c) and (d) Bond concentration change with respect to the pristine sample versus EUV power for and .

Tables

Generic image for table
Table I.

Experimental settings summary. Two parameters vary among different experiments: Exposure time to EUV radiation and/or H, hydrogen pressure.

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/content/aip/journal/jap/114/4/10.1063/1.4817082
2013-07-26
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Extreme ultraviolet induced defects on few-layer graphene
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/4/10.1063/1.4817082
10.1063/1.4817082
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