Comparison of particle energies generated using the different injection methods. Electrons were injected from position x = 0 into a block of material held at 300 K.
Simplified flowchart detailing the main processes in the EMC model, including the parameters of potential (V), temperature (T), doping (n), and net lattice energy (Ee-ph) as they are passed between the modules.
Schematic diagram of the band structure used within the model and the applied doping profile. The simulated area was 160 × 90 μm2 and in each simulation the contact dimensions were not altered.
Current against increasing barrier height for barriers of 1.0 μm.
Plot of the effective barrier height, determined from the combined effect of the conduction band-structure and calculated potential.
Current against barrier width, for barrier heights of 0.05 eV.
Cooling power vs barrier height for barriers 0.03 eV to 0.13 eV. The micro-cooler moves from cooling to heating at approximately 0.08 eV.
Cooling power verses barrier thickness for 0.05 eV height. Peak at 0.4 μm shows possible optimum cooling width.
Temperature profile for a range of barrier heights: 0.03 eV, 0.05 eV, and 0.13 eV. The right side temperature boundary condition is fixed at 300 K, while the left side one is allowed to float.
Schematic of micro-cooler design. In simulations the Anode is attached to the Copper heat sink.
Development of the hetero-interface. The initial approximation which produced only heating within the micro-cooler is shown (dotted line) against the final (128 nm length) configuration (dark solid line). The original device design is shown for comparison.
Calculated temperatures using different lengths of the graded AlGaAs interface. Preliminary simulation data for the initial device structure is given (50 nm).
Calculated temperature profile for three different lengths of the curved AlGaAs graded interface. The results predict the cooling to be almost double that of when the linear form of the interface was used.
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