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Improvements in thermionic cooling through engineering of the heterostructure interface using Monte Carlo simulations
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10.1063/1.4817087
/content/aip/journal/jap/114/4/10.1063/1.4817087
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/4/10.1063/1.4817087

Figures

Image of FIG. 1.
FIG. 1.

Comparison of particle energies generated using the different injection methods. Electrons were injected from position x = 0 into a block of material held at 300 K.

Image of FIG. 2.
FIG. 2.

Simplified flowchart detailing the main processes in the EMC model, including the parameters of potential (V), temperature (T), doping (n), and net lattice energy (E) as they are passed between the modules.

Image of FIG. 3.
FIG. 3.

Schematic diagram of the band structure used within the model and the applied doping profile. The simulated area was 160 × 90 m and in each simulation the contact dimensions were not altered.

Image of FIG. 4.
FIG. 4.

Current against increasing barrier height for barriers of 1.0 m.

Image of FIG. 5.
FIG. 5.

Plot of the effective barrier height, determined from the combined effect of the conduction band-structure and calculated potential.

Image of FIG. 6.
FIG. 6.

Current against barrier width, for barrier heights of 0.05 eV.

Image of FIG. 7.
FIG. 7.

Cooling power vs barrier height for barriers 0.03 eV to 0.13 eV. The micro-cooler moves from cooling to heating at approximately 0.08 eV.

Image of FIG. 8.
FIG. 8.

Cooling power verses barrier thickness for 0.05 eV height. Peak at 0.4 m shows possible optimum cooling width.

Image of FIG. 9.
FIG. 9.

Temperature profile for a range of barrier heights: 0.03 eV, 0.05 eV, and 0.13 eV. The right side temperature boundary condition is fixed at 300 K, while the left side one is allowed to float.

Image of FIG. 10.
FIG. 10.

Schematic of micro-cooler design. In simulations the Anode is attached to the Copper heat sink.

Image of FIG. 11.
FIG. 11.

Development of the hetero-interface. The initial approximation which produced only heating within the micro-cooler is shown (dotted line) against the final (128 nm length) configuration (dark solid line). The original device design is shown for comparison.

Image of FIG. 12.
FIG. 12.

Calculated temperatures using different lengths of the graded AlGaAs interface. Preliminary simulation data for the initial device structure is given (50 nm).

Image of FIG. 13.
FIG. 13.

Calculated temperature profile for three different lengths of the curved AlGaAs graded interface. The results predict the cooling to be almost double that of when the linear form of the interface was used.

Tables

Generic image for table
Table I.

Material parameters used within the model. Where parameter values were missing extrapolation was used.

Generic image for table
Table II.

GaAs and AlGaAs material parameters. Parameters are based on the data from Fischetti, Brennan , Adachi, and Ioffe database.

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/content/aip/journal/jap/114/4/10.1063/1.4817087
2013-07-30
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvements in thermionic cooling through engineering of the heterostructure interface using Monte Carlo simulations
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/4/10.1063/1.4817087
10.1063/1.4817087
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