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Thermal broadening of electron mobility distribution in AlGaN/AlN/GaN heterostructures
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10.1063/1.4813866
/content/aip/journal/jap/114/5/10.1063/1.4813866
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/5/10.1063/1.4813866

Figures

Image of FIG. 1.
FIG. 1.

AlGaN/AlN/GaN conduction band profile, Fermi energy, first and second subband energies, and wave functions at room temperature.

Image of FIG. 2.
FIG. 2.

Calculated broadening of the 2DEG mobility distribution due to interface roughness scattering, as a consequence of fluctuations in interface roughness parameters.

Image of FIG. 3.
FIG. 3.

Calculated broadening of the 2DEG mobility distribution due to dislocation scattering, as a consequence of fluctuations in dislocation parameters.

Image of FIG. 4.
FIG. 4.

Calculated variation of the 2DEG mobility distribution due to piezoelectric scattering as a function of temperature.

Image of FIG. 5.
FIG. 5.

Calculated broadening of the 2DEG mobility distribution due to piezoelectric scattering, as a consequence of fluctuations in parameters associated with piezoelectric scattering.

Image of FIG. 6.
FIG. 6.

Calculated broadening of 2DEG mobility distribution due to deformation potential scattering, as a consequence of fluctuations in deformation potential parameters.

Image of FIG. 7.
FIG. 7.

The normalized density of states, D.S(E), Fermi-Dirac distribution function, f(E), and carrier density distribution, N(E), of the different subbands.

Image of FIG. 8.
FIG. 8.

Calculated sheet conductivity as a function of electron energy at different temperatures.

Image of FIG. 9.
FIG. 9.

Calculated broadening of the 2DEG mobility distribution due to optical phonon scattering as a function of temperature.

Image of FIG. 10.
FIG. 10.

Experimental and calculated broadening of the total 2DEG mobility distribution as a function of temperature.

Image of FIG. 11.
FIG. 11.

Calculated broadening of the 2DEG mobility distribution in comparison with its mean value as a function of temperature.

Image of FIG. 12.
FIG. 12.

Experimental and calculated sheet conductivity as a function of 2DEG mobility at T = 95 and 125 K. The inset indicates the distribution function of the average height of the interface roughness used to fit the experimental data.

Tables

Generic image for table
Table I.

Material parameters used in electron mobility calculations for the AlGaN/AlN/GaN heterostructure.

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/content/aip/journal/jap/114/5/10.1063/1.4813866
2013-08-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal broadening of electron mobility distribution in AlGaN/AlN/GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/5/10.1063/1.4813866
10.1063/1.4813866
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