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Occupation statistics of the 5/7-atom dislocation core structure within n-type indium nitride
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10.1063/1.4815878
/content/aip/journal/jap/114/5/10.1063/1.4815878
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/5/10.1063/1.4815878

Figures

Image of FIG. 1.
FIG. 1.

(a) Approximation of the actual screening space-charge distribution occurring within n-type GaN (red curve) with a step function (blue curve), as was originally performed in the model of Read. (b) Approximation of the exact screening space-charge distribution occurring within n-type InN (red curve) with an exponential function fit (blue curve), as has been performed in the present analysis. In Figures 1(a) and 1(b) , , and denote the average charge, in units of the fundamental electron charge, per dislocation defect site, the bulk donor concentration, and the temperature, respectively. The actual screening space-charge distribution corresponding to n-type GaN was determined using the procedure outlined by Baghani and O’Leary.

Image of FIG. 2.
FIG. 2.

The four possible occupation states associated with the N-N anti-bonding defect site within the wurtzite 5/7 atom dislocation core structure. The number below each state refers to the net charge of the state in units of the fundamental electron charge.

Image of FIG. 3.
FIG. 3.

A schematic diagram for the energy band bending around a dislocation line within n-type InN.

Image of FIG. 4.
FIG. 4.

The fraction of N-N anti-bonding energy levels in their possible neutral and charged states, i.e., , and , as a function of the bulk doping concentration for the case of n-type wurtzite InN. The calculations are all performed at 300 K.

Image of FIG. 5.
FIG. 5.

The free electron concentration achievable at four different dislocation line densities within n-type wurtzite InN as a function of the bulk doping concentration. The calculations are all performed at 300 K.

Image of FIG. 6.
FIG. 6.

Electron Hall mobility limited by scattering from charged dislocation lines within n-type InN. The dashed curve in this figure is after Gallinat and represents a best fit curve to their experimental data.

Tables

Generic image for table
Table I.

The material parameters corresponding to wurtzite InN that we employ for the purposes of our calculations. The symbols, , and , represent the conduction band minimum energy level, the single occupancy N-N anti-bonding energy level, the double occupancy N-N anti-bonding energy level, the relative dielectric constant, the c-lattice constant, and the a-lattice constant, respectively. denotes the free electron mass. All energies are measured with respect to the valence band maximum energy level.

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/content/aip/journal/jap/114/5/10.1063/1.4815878
2013-08-02
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Occupation statistics of the 5/7-atom dislocation core structure within n-type indium nitride
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/5/10.1063/1.4815878
10.1063/1.4815878
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