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Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1−xN films using infrared spectroscopy
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10.1063/1.4817172
/content/aip/journal/jap/114/5/10.1063/1.4817172
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/5/10.1063/1.4817172

Figures

Image of FIG. 1.
FIG. 1.

Infrared reflectivity measurements of -doped AlGaN films deposited on AlN(100 nm)/GaN(30 nm)/AlO) lattice-matched substrate.

Image of FIG. 2.
FIG. 2.

Infrared reflectivity measurements of -doped AlGaN films deposited on AlN(100 nm)/GaN(30 nm)/AlO) lattice-matched substrate.

Image of FIG. 3.
FIG. 3.

Infrared reflectivity spectra of AlO substrate, 30 nm of GaN nucleation layer on AlO substrate, and 100 nm AlN nucleation layer deposited on 30 nm GaN nucleation layer on AlO substrate. Symbols: measurements. Solid lines: calculation using the model outlined in Ref. within Maxwell's theory for electromagnetic wave propagating in a system of thin films.

Image of FIG. 4.
FIG. 4.

Dielectric properties of -doped AlGaN films deduced from the developed infrared technique.

Image of FIG. 5.
FIG. 5.

Dielectric properties of -doped AlGaN films deduced from the developed infrared technique.

Image of FIG. 6.
FIG. 6.

Energy loss functions of the -doped AlGaN films investigated.

Image of FIG. 7.
FIG. 7.

Energy loss function of the -doped AlGaN films investigated.

Image of FIG. 8.
FIG. 8.

Comparison between measured (symbols) and calculated (solid lines) reflectivity spectra of -doped AlGaN films deposited on AlN(100 nm)/GaN(30 nm)/AlO) lattice-matched substrate.

Image of FIG. 9.
FIG. 9.

Comparison between measured (symbols) and calculated (solid lines) reflectivity spectra of -doped AlGaN films deposited on AlN(100 nm)/GaN(30 nm)/AlO) lattice-matched substrate.

Image of FIG. 10.
FIG. 10.

Reflection and transmission at interfaces. (a) Case of thin film on substrate. (b) Case of multilayer structure.

Tables

Generic image for table
Table I.

Parameters of the calculated reflectivity spectra. ω is the frequency of transverse phonon, S the oscillator strength, C the coefficient of the optical phonon decay via three-phonon processes, C the coefficient of the optical phonon decay via four-phonon processes, and D the coefficient of the optical phonon decay due to scattering by point-defects.

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/content/aip/journal/jap/114/5/10.1063/1.4817172
2013-08-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1−xN films using infrared spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/5/10.1063/1.4817172
10.1063/1.4817172
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