1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure
Rent:
Rent this article for
USD
10.1063/1.4817174
/content/aip/journal/jap/114/5/10.1063/1.4817174
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/5/10.1063/1.4817174

Figures

Image of FIG. 1.
FIG. 1.

(a) Room temperature XRD data of AlO (0006) and VO (020). (b) The effect of O flow rate on -spacing. (c) The effect of spacing on the transition temperature.

Image of FIG. 2.
FIG. 2.

(a) V -edge and O -edge XAS, TFY is more bulk sensitive, and TEY is more surface sensitive. (b) V 2 XPS.

Image of FIG. 3.
FIG. 3.

(a) DC resistivity as a function of temperature. (b) V -edge resonant photoemission. Dashed lines are high temperature (∼400 K) measurements (metallic), and solid lines are room temperature measurements (insulating).

Tables

Generic image for table
Table I.

Electrical transport properties of the 4 samples with different O flow rate.

Loading

Article metrics loading...

/content/aip/journal/jap/114/5/10.1063/1.4817174
2013-08-02
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/5/10.1063/1.4817174
10.1063/1.4817174
SEARCH_EXPAND_ITEM