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Nature of the AX center participating persistent photoconductivity effect in As-doped p-ZnO
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10.1063/1.4817246
/content/aip/journal/jap/114/5/10.1063/1.4817246
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/5/10.1063/1.4817246

Figures

Image of FIG. 1.
FIG. 1.

Depth profiles of the As ion counts on As-implanted ZnO before and after the post-annealing of 800 °C.

Image of FIG. 2.
FIG. 2.

Buildup curves of PPC measured during the illumination with the 365 nm line at several temperatures. The subfigure in Fig. 2 showed the PPC intensity as a function of the reciprocal temperature.

Image of FIG. 3.
FIG. 3.

Normalized PPC decay curves measured with temperature dependence.

Image of FIG. 4.
FIG. 4.

Plots of . on the temperature dependence of PPC decay time.

Image of FIG. 5.
FIG. 5.

PL spectrum obtained from As-doped -ZnO measured at 13 K.

Tables

Generic image for table
Table I.

Parameters on the buildup and decay times obtained by Eqs. (4) and (5) .

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/content/aip/journal/jap/114/5/10.1063/1.4817246
2013-08-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nature of the AX center participating persistent photoconductivity effect in As-doped p-ZnO
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/5/10.1063/1.4817246
10.1063/1.4817246
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