Depth profiles of the As ion counts on As-implanted ZnO before and after the post-annealing of 800 °C.
Buildup curves of PPC measured during the illumination with the 365 nm line at several temperatures. The subfigure in Fig. 2 showed the PPC intensity as a function of the reciprocal temperature.
Normalized PPC decay curves measured with temperature dependence.
Plots of ln τ vs. 1/T on the temperature dependence of PPC decay time.
PL spectrum obtained from As-doped p-ZnO measured at 13 K.
Parameters on the buildup and decay times obtained by Eqs. (4) and (5) .
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