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Light absorption and conversion in solar cell based on Si:O alloy
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Image of FIG. 1.
FIG. 1.

(a) Absorption coefficient spectra for as deposited (stars) intrinsic, (squares) -doped, and (triangles) -doped Si:O alloys and for (asterisk) a-Si:H. (b) Absorption coefficient spectra for 400 °C annealed (stars) intrinsic, (squares) -doped, and (triangles) -doped Si:O alloys. (c) Tauc plot (symbols) and relative fit (lines) for as deposited (open triangles) and 400 °C annealed (closed triangles) doped Si:O alloys.

Image of FIG. 2.
FIG. 2.

H concentration profile, as extracted from ERDA data, for as deposited (continuous line) and 400 °C annealed (dashed line) doped Si:O alloys. A schematic for the ERDA set-up is drawn.

Image of FIG. 3.
FIG. 3.

Thermal dependence of (a) absorption coefficient at 2.5 eV of photon energy, (b) optical bandgap, and (c) average H concentration for all the Si:O alloys investigated in this work (the dashed and continuous lines are only guideline for the eyes). Data relative to as deposited samples are reported at the deposition temperature (280 °C) as indicated by the vertical arrow.

Image of FIG. 4.
FIG. 4.

Current density–voltage characteristics for a -i- cell based on Si:O alloys embedded within two transparent conductive oxides, under dark or light (30 W tungsten halogen lamp) conditions. The inset shows the scanning electron microscopy of a cross section of the Si:O based cell.

Image of FIG. 5.
FIG. 5.

EQE spectrum measured for the -i- cell based on Si:O alloy (multiplied by a factor 20, line) compared to the EQE spectrum measured for a -i- cell based on a-Si:H material (dashed line).


Generic image for table
Table I.

Dopant precursor gas and fluxes used for doped Si:O films have been listed, together with the dopant concentration as measured by SIMS.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Light absorption and conversion in solar cell based on Si:O alloy