(a) Absorption coefficient spectra for as deposited (stars) intrinsic, (squares) p-doped, and (triangles) n-doped Si:O alloys and for (asterisk) a-Si:H. 33,34 (b) Absorption coefficient spectra for 400 °C annealed (stars) intrinsic, (squares) p-doped, and (triangles) n-doped Si:O alloys. (c) Tauc plot (symbols) and relative fit (lines) for as deposited (open triangles) and 400 °C annealed (closed triangles) n-doped Si:O alloys.
H concentration profile, as extracted from ERDA data, for as deposited (continuous line) and 400 °C annealed (dashed line) n-doped Si:O alloys. A schematic for the ERDA set-up is drawn.
Thermal dependence of (a) absorption coefficient at 2.5 eV of photon energy, (b) optical bandgap, and (c) average H concentration for all the Si:O alloys investigated in this work (the dashed and continuous lines are only guideline for the eyes). Data relative to as deposited samples are reported at the deposition temperature (280 °C) as indicated by the vertical arrow.
Current density–voltage characteristics for a p-i-n cell based on Si:O alloys embedded within two transparent conductive oxides, under dark or light (30 W tungsten halogen lamp) conditions. The inset shows the scanning electron microscopy of a cross section of the Si:O based cell.
EQE spectrum measured for the p-i-n cell based on Si:O alloy (multiplied by a factor 20, line) compared to the EQE spectrum measured for a p-i-n cell based on a-Si:H material (dashed line).
Dopant precursor gas and fluxes used for doped Si:O films have been listed, together with the dopant concentration as measured by SIMS.
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