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Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si
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10.1063/1.4817254
/content/aip/journal/jap/114/5/10.1063/1.4817254
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/5/10.1063/1.4817254
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Ti depth profiles obtained by the ToF-SIMS technique for a sample as-implanted and for a sample implanted and subsequently PLM processed at 1.8 J/cm. The theoretical Mott limit is included as a reference.

Image of FIG. 2.
FIG. 2.

(a) XTEM image of the surface of a sample Ti implanted and subsequently PLM processed at 1.8 J/cm showing an area of approximately 650 × 650 nm. (b) XTEM image of the surface of a sample Ti implanted and subsequently PLM processed at 1.8 J/cm showing an area of approximately 100 × 100 nm. (c) ED diagram of the layer Ti implanted and subsequently PLM processed at 1.8 J/cm with a diffraction area of 50 nm. (d)XTEM image of the surface of a Si implanted Si sample PLM processed at 1 J/cm.

Image of FIG. 3.
FIG. 3.

Absorption coefficient as a function of the incident photon energy of a sample Ti as-implanted and of a sample Ti implanted and subsequently PLM processed at 1.8 J/cm. Absorption coefficient of Si has been included as a reference in the inset.

Image of FIG. 4.
FIG. 4.

Variation of the sheet conductance under illumination normalized to the incident power at 90 K as a function of the incident photon energy. (a) Si reference sample, non-implanted PLM processed Si sample and a Si sample implanted with Si and subsequently PLM processed. (b) Ti as-implanted sample and Ti implanted and subsequently PLM processed sample together with the Si reference sample. The inset shows the variation of the sheet conductance of the Ti as-implanted sample in a lineal scale.

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/content/aip/journal/jap/114/5/10.1063/1.4817254
2013-08-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/5/10.1063/1.4817254
10.1063/1.4817254
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