The wafer structures of samples A–F. The Sb/background As flux ratios during the post Sb soaking procedure are 3.44 for samples A and 0.25 for rest of the samples.
(a) The 1 × 1 μm2 and (b) 300 × 300 nm2 AFM image of sample A. (c) The surface profile of the line depicted on (b).
A schematic figure describing the formation mechanisms of GaSb QRs.
(a) The 1 × 1 μm2 AFM images and (b) The corresponding ring heights (top), inner diameters (bottom-left) and outer diameters (bottom-right) of samples B, C, and D.
The 10 K PL spectrums of samples B, C, and D.
(a) The 1 × 1 μm2 AFM images and (b) The 10 K PL spectrums of samples D, E, and F.
Article metrics loading...
Full text loading...