Electron (a) and hole (b) mobility, electron (c) and hole (d) average inverse effective mass in Si NTs, as function of with nm, for ( ), ( ) and (◇) orientations. The equivalent data for NWs are shown as function of for comparison. is the free-electron mass.
Electron (a) and hole (b) average inverse effective mass as function of the inner diameter in NTs with nm, for ( ), ( ) and (◇) orientations. is the free-electron mass.
Electron (a–c) and hole (d–e) band structures for (a,d), 4 (b,e), 16 nm (c,f), for NTs with fixed thickness nm. The NTs have (a–c) or (d–e) orientation. is the length of the unit cell; and are the conduction and valence band edges, respectively. The insets show density plots of the wave functions at the band edges. The localization of the wave functions at one side of the NTs (b,c) is induced by very small asymmetry in the structures.
Conduction and valence band edges as function of the inner diameter of NTs with fixed outer diameter nm (a,c) or with fixed thickness nm (b,d), for ( ), ( ) and (◇) orientations.
Parameters of Eq. (1) fitting band edge energies of Si NTs. The values are given for energies defined in eV and diameters in nm.
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