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Impact ionization of nitrogen in 4H- and 6H-SiC
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10.1063/1.4817731
/content/aip/journal/jap/114/6/10.1063/1.4817731
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/6/10.1063/1.4817731

Figures

Image of FIG. 1.
FIG. 1.

Experimental structures for measurements electrical nitrogen breakdown in 4H-, 6H-SiC (a)—for ; (b)—for .

Image of FIG. 2.
FIG. 2.

The I-V characteristics measured at the temperature 4.2 K of n-type 4H-SiC samples with different doping levels and direction of electric field : (1) ; (2) and for the direction of the field ; (3) ; (4) ; (5) . The inset shows the initial region of curves 3 and 4.

Image of FIG. 3.
FIG. 3.

The I-V characteristics of n-type 6H-SiC samples with different doping levels at 4.2 K for the direction of the electric field : (1) ; (2) ; (3) ; (4) ; (5) . The inset shows the initial region of curves 1, 2, 4, and 5.

Image of FIG. 4.
FIG. 4.

The dependence of nitrogen impurity breakdown field in 4H-, 6H-SiC on , + —from work.

Image of FIG. 5.
FIG. 5.

Band structure of 4H-SiC (a), and 6H-SiC (b), right hand site . Schematic zone dispersion left hand site , . —axis of crystal and superlattice. —size of the crystal cell along axis. = /2—period of superlattice. energy equalled to nitrogen ionization energy.

Tables

Generic image for table
Table I.

Parameters of nitrogen donor impurity SiC polytypes.

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/content/aip/journal/jap/114/6/10.1063/1.4817731
2013-08-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact ionization of nitrogen in 4H- and 6H-SiC
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/6/10.1063/1.4817731
10.1063/1.4817731
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