Experimental structures for measurements electrical nitrogen breakdown in 4H-, 6H-SiC (a)—for ; (b)—for .
The I-V characteristics measured at the temperature 4.2 K of n-type 4H-SiC samples with different doping levels and direction of electric field : (1) ; (2) and for the direction of the field ; (3) ; (4) ; (5) . The inset shows the initial region of curves 3 and 4.
The I-V characteristics of n-type 6H-SiC samples with different doping levels at 4.2 K for the direction of the electric field : (1) ; (2) ; (3) ; (4) ; (5) . The inset shows the initial region of curves 1, 2, 4, and 5.
The dependence of nitrogen impurity breakdown field in 4H-, 6H-SiC on , + —from work. 12
Band structure of 4H-SiC (a), and 6H-SiC (b), right hand site . Schematic zone dispersion left hand site x, . C—axis of crystal and superlattice. c—size of the crystal cell along C axis. d = c/2—period of superlattice. E—energy equalled to nitrogen ionization energy.
Parameters of nitrogen donor impurity SiC polytypes.
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