Schematic representation of the electronic states within a semiconductor, alongside with the electronic transitions that are considered in our model.
SRH-lifetime τSRH, RAT-lifetime τRAT, total recombination lifetime τr and apparent lifetime τapp shown for the defect parameters given in Table I and for a doping concentration of N A = 1015 cm−3.
Apparent lifetime τapp and recombination lifetime τr for variations of the majority capture cross section of the RAT-defect.
Apparent lifetime τapp and total recombination lifetime τr for variations of the RAT density N RAT. With increasing N RAT the apparent lifetime increases and the recombination lifetime decreases.
Apparent lifetime τapp and recombination lifetime τr for variations of the RAT energy level ERAT for σp,RAT = 10−20 cm2 (solid lines) and σp,RAT = 0 cm2 (dashed lines).
Lifetime data of mc-Si samples with (circles) and without (triangles) firing step from QSSPC- (open symbols) and photoluminescence-(filled symbols) measurements and fit (lines) of the lifetime data using SRH statistics and the defect parameters presented in Table V .
(a) JSC-VOC curves of two solar cells. The marked data range shows the data points that are used to calculate the recombination lifetime. (b) Calculated recombination lifetime (filled symbols) and QSSPC measurements (open symbols) of the cells.
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