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Trapping behavior of Shockley-Read-Hall recombination centers in silicon solar cells
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10.1063/1.4817910
/content/aip/journal/jap/114/6/10.1063/1.4817910
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/6/10.1063/1.4817910

Figures

Image of FIG. 1.
FIG. 1.

Schematic representation of the electronic states within a semiconductor, alongside with the electronic transitions that are considered in our model.

Image of FIG. 2.
FIG. 2.

SRH-lifetime τ, RAT-lifetime τ, total recombination lifetime τ and apparent lifetime τ shown for the defect parameters given in Table I and for a doping concentration of  = 10 cm.

Image of FIG. 3.
FIG. 3.

Apparent lifetime τ and recombination lifetime τ for variations of the majority capture cross section of the RAT-defect.

Image of FIG. 4.
FIG. 4.

Apparent lifetime τ and total recombination lifetime τ for variations of the RAT density . With increasing the apparent lifetime increases and the recombination lifetime decreases.

Image of FIG. 5.
FIG. 5.

Apparent lifetime τ and recombination lifetime τ for variations of the RAT energy level E for σ = 10 cm (solid lines) and σ = 0 cm (dashed lines).

Image of FIG. 6.
FIG. 6.

Lifetime data of mc-Si samples with (circles) and without (triangles) firing step from QSSPC- (open symbols) and photoluminescence-(filled symbols) measurements and fit (lines) of the lifetime data using SRH statistics and the defect parameters presented in Table V .

Image of FIG. 7.
FIG. 7.

(a) J-V curves of two solar cells. The marked data range shows the data points that are used to calculate the recombination lifetime. (b) Calculated recombination lifetime (filled symbols) and QSSPC measurements (open symbols) of the cells.

Tables

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Table I.

Defect parameters related to Figure 2 .

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Table II.

Defect parameters related to Figure 3 .

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Table III.

Defect parameters related to Figure 4 .

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Table IV.

Defect parameters related to Figure 5 .

Generic image for table
Table V.

Defect parameters related to Figure 6 .

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/content/aip/journal/jap/114/6/10.1063/1.4817910
2013-08-09
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Trapping behavior of Shockley-Read-Hall recombination centers in silicon solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/6/10.1063/1.4817910
10.1063/1.4817910
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