X-ray diffraction pattern measured in grazing incidence geometry (GIXRD) for the Si/SiO2/Ta(6 nm)/CFA(4.8 nm)/MgO(0.65 nm)/Ta(1.2 nm) multilayer stack annealed at 200 °C. The symbols represent experimental data, while the lines are the result of the theoretical fit. The vertical dashed lines mark the positions of the Ta(110) and CFA(220), (400), and (422) reflections, respectively.
In-plane and out-of-plane magnetization curves for the as-deposited and 200 °C annealed samples with CFA thickness of 1.4 and 1.7 nm.
Evolution of the saturation magnetization (Ms) with the annealing temperature for multilayer stacks with different CFA thicknesses.
(a) M S t vs. CFA nominal layer thickness for the samples annealed at 150 °C. The straight line is the result of the linear fit. (b) Dependence of the magnetic dead layer thickness and saturation magnetization on the annealing temperature.
Dependence of the product on the for the samples annealed at 150 °C. The straight line is the result of a linear fit.
Contour plot of the product vs. the nominal thickness of the CFA layer and the annealing temperature. The dashed line depicts the boundary between the in-plane and out-of-plane anisotropy. The gray area is the region where the clear ferromagnetic signal of the CFA films is lost.
Article metrics loading...
Full text loading...