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Effects of ferroelectric polarization switching on the electronic transport and magnetic properties of La0.8Ce0.2MnO3 epitaxial thin films
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10.1063/1.4817080
/content/aip/journal/jap/114/7/10.1063/1.4817080
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4817080
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD θ-2θ scan for the LCEMO/PMN-PT structure. Left panel: the rocking curve taken around LCEMO (002) diffraction peak. Right panel: the off-axis θ-2θ scan data obtained by tilting the film plane at an angle of 45°. (b) XRD phi scans taken on the LCEMO (101) and PMN-PT (101) diffraction peaks, respectively. (c) Out-of-plane piezo-strain versus curve for the PMN-PT substrate at  = 296 K. (d) The AFM image of the LCEMO film.

Image of FIG. 2.
FIG. 2.

Temperature dependence of the resistance for the LCEMO film when the PMN-PT substrate was in positively and negatively polarized states. The inset shows the relative change in the resistance, [ ], of the LCEMO film with the reversal of the polarization direction.

Image of FIG. 3.
FIG. 3.

Electric-field-induced change in the resistance of the LCEMO film at several fixed temperatures as a function of bipolar electric field applied to the PMN-PT substrate.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the magnetization for the LCEMO film when the PMN-PT substrate was in positively and negatively polarized states, respectively. The inset shows the in-plane magnetic hysteresis loops () for the two polarization states of the PMN-PT substrate.

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/content/aip/journal/jap/114/7/10.1063/1.4817080
2013-08-19
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of ferroelectric polarization switching on the electronic transport and magnetic properties of La0.8Ce0.2MnO3 epitaxial thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4817080
10.1063/1.4817080
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