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Performance improvement of organic light emitting diode with aluminum oxide buffer layer for anode modification
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10.1063/1.4817239
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    Affiliations:
    1 Printable Electronics Research Center, Suzhou Institute of Nano-Technology and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu 215123, People's Republic of China
    2 Graduate School of the Chinese Academy of Sciences, 19A Yuquan Road, Beijing 100049, People's Republic of China
    3 Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
    a) Author to whom correspondence should be addressed. Electronic mail: wmsu2008@sinano.ac.cn. Tel.: +86-512-62872730. Fax: +86-512-62603079.
    J. Appl. Phys. 114, 074506 (2013); http://dx.doi.org/10.1063/1.4817239
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/content/aip/journal/jap/114/7/10.1063/1.4817239
2013-08-19
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Performance improvement of organic light emitting diode with aluminum oxide buffer layer for anode modification
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4817239
10.1063/1.4817239
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