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Control of the Ge nanocrystal synthesis by co-implantation of Si+
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10.1063/1.4817667
/content/aip/journal/jap/114/7/10.1063/1.4817667
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4817667

Figures

Image of FIG. 1.
FIG. 1.

Effect of co-implanted Si or N on the surface density of remaining Ge in samples annealed at 950 C, 1050 C, and 1150 C. Solid and open symbols refer to RBS measurements using a He beam of 350 keV and 2 MeV, respectively.

Image of FIG. 2.
FIG. 2.

Raman spectra of the sample series annealed at 950 C (a), 1050 C (b), and 1150 C (c).

Image of FIG. 3.
FIG. 3.

Example of spectral deconvolution of Ge-nc phonon peaks (a). Evolution of the integrated phonon intensity related to pure Ge-Ge chemical bonds, Ge-Ge chains with Si impurities (labelled Ge-Ge*), Si-Ge bonds, Si-Si chains with Ge impurities (Si-Si*), in samples annealed at 950 C (b), 1050 C (c), and 1150 C (d).

Image of FIG. 4.
FIG. 4.

High resolution SEM imaging of Ge-nc and nanocavities in the samples solely implanted with Ge (a), and co-implanted with Si at fluences of 2 × 10 Si cm (b), 4 × 10 Si cm (c), 5 × 10 Si cm (d), 7 × 10 Si cm (e), and 13 × 10 Si cm (f). Inset: Ge depth-profile within fused silica, obtained from SRIM calculations.

Tables

Generic image for table
Table I.

Size () and size-distribution (σ) of all nano-objects observed () within the samples of Fig. 4 , as a function of the Si co-implanted fluences ( ).

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/content/aip/journal/jap/114/7/10.1063/1.4817667
2013-08-15
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of the Ge nanocrystal synthesis by co-implantation of Si+
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4817667
10.1063/1.4817667
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