Effect of co-implanted Si+ or N+ on the surface density of remaining Ge in samples annealed at 950 °C, 1050 °C, and 1150 °C. Solid and open symbols refer to RBS measurements using a He+ beam of 350 keV and 2 MeV, respectively.
Raman spectra of the sample series annealed at 950 °C (a), 1050 °C (b), and 1150 °C (c).
Example of spectral deconvolution of Ge-nc phonon peaks (a). Evolution of the integrated phonon intensity related to pure Ge-Ge chemical bonds, Ge-Ge chains with Si impurities (labelled Ge-Ge*), Si-Ge bonds, Si-Si chains with Ge impurities (Si-Si*), in samples annealed at 950 °C (b), 1050 °C (c), and 1150 °C (d).
High resolution SEM imaging of Ge-nc and nanocavities in the samples solely implanted with Ge (a), and co-implanted with Si+ at fluences of 2 × 1016 Si+ cm−2 (b), 4 × 1016 Si+ cm−2 (c), 5 × 1016 Si+ cm−2 (d), 7 × 1016 Si+ cm−2 (e), and 13 × 1016 Si+ cm−2 (f). Inset: Ge depth-profile within fused silica, obtained from SRIM calculations.
Size (d) and size-distribution (σ) of all nano-objects observed (N) within the samples of Fig. 4 , as a function of the Si+ co-implanted fluences (F Si).
Article metrics loading...
Full text loading...