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Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length
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10.1063/1.4817884
/content/aip/journal/jap/114/7/10.1063/1.4817884
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4817884

Figures

Image of FIG. 1.
FIG. 1.

Geometry of the studied structures with physical dimensions. (a) Diode with a 250 nm-length notch placed next to the cathode and (b) diode without notch. The lengths of contact regions are 100 nm and 300 nm at the cathode and anode, respectively, in both structures.  = 2 × 10 cm, DS1:  = 1  × 10 cm and  = 2 × 10 cm and DS2:  = 5 × 10 cm and  = 1 × 10 cm. Four different lengths,  = 1500, 1200, 900, and 750 nm have been simulated.

Image of FIG. 2.
FIG. 2.

Scheme of the parallel RLC circuit connected in series with a diode.

Image of FIG. 3.
FIG. 3.

Time-sequences of current density and applied voltage (t) in a InP diode using the DS1 and  = 7.5 V. (a) Resonant RLC circuit in series with the diode ( = 3 × 10 Ωm,  = 4.7 × 10 Hm, and  = 0.0081 F/m) and (b) excitation by means of a single-tone of frequency 243 GHz and  = 1.9 V [Eq. (3) ].

Image of FIG. 4.
FIG. 4.

curves for the two types of diodes, with and without notch, and for different lengths of the active region:  = 1500 nm, 1200 nm, 900 nm, and 750 nm for the DS1 and for (a) InP and (b) GaN.

Image of FIG. 5.
FIG. 5.

DC to AC conversion efficiency vs. frequency for InP-based diodes (with and without notch) with  = 900 nm and for the DS1. Single-tone excitation with  = 12 V and  = 1.5 V. The inset shows the real part of the impedance.

Image of FIG. 6.
FIG. 6.

FME and corresponding efficiency of the different generation bands found in diodes with the DS1 with and without notch. The size of the bubbles scales with the maximum of the DC to AC conversion efficiency, , indicated for the different generation bands. The dependence on the length of the active region is shown for (a) InP diodes using  = 12 V and  = 1.5 V and (b) GaN diodes using  = 70 V and  = 10 V. (c) Dependence on the DC bias for  = 900 nm and using and AC excitation of  = 1.5 V for InP and  = 10 V for GaN.

Image of FIG. 7.
FIG. 7.

DC to AC conversion efficiency vs. frequency for GaN-based diodes (with and without notch) with  = 1200 nm and for the DS1. Single-tone excitation with  = 70 V and  = 10 V. The inset shows the profile of carrier concentration along the diode corresponding to a given time within one period of the AC signal for frequencies at the maximum of the emission bands to be FME = 175, 318.7, 475, and 637.5 GHz.

Image of FIG. 8.
FIG. 8.

Results in a GaN diode (with and without notch) when the DS2 is considered. (a) curves for different lengths of the active region:  = 1500 nm, 1200 nm, 900 nm, and 750 nm. Dependence of the FME and corresponding efficiency of the different generation bands on the (b) length of the active region ( = 70 V and  = 10 V) and (c) DC bias for  = 900 nm and using  = 10 V. The size of the bubbles scales with the maximum of the DC to AC conversion efficiency, , and is indicated for the corresponding generation band.

Image of FIG. 9.
FIG. 9.

DC to AC conversion efficiency vs. frequency for a GaN-based diode with notch with  = 900 nm and for the DS2 and with  = 70 V. The AC excitation used are  = 10 V, 8.5 V, and 6.5 V. Also results  = 500 K are presents ( = 10 V).

Tables

Generic image for table
Table I.

Relevant properties of InP and GaN at room temperature.

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/content/aip/journal/jap/114/7/10.1063/1.4817884
2013-08-15
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4817884
10.1063/1.4817884
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