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Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers
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10.1063/1.4818332
/content/aip/journal/jap/114/7/10.1063/1.4818332
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4818332
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of the as-prepared samples under cw 442 nm excitation.

Image of FIG. 2.
FIG. 2.

PL spectra of the samples (a) I, (b) Both-B, (c) SiC-B, and (d) SRC-B under cw 442 nm excitation. Note that the y-axes are different as PL intensities differ by orders of magnitude.

Image of FIG. 3.
FIG. 3.

Normalized microsecond PL dynamics recorded at spectral maxima of the samples (a) I, (b) Both-B, (c) SiC-B, and (d) SRC-B.

Image of FIG. 4.
FIG. 4.

(a) Normalized picosecond PL dynamics at 730 nm, sample Both-B, laser fluence 14 mJ/cm. (b) Normalized dynamics of transient transmission at 800 nm, sample Both-B, laser fluence 10 mJ/cm.

Image of FIG. 5.
FIG. 5.

Dynamics of transient transmission of the sample Both-B, excited by various excitation pump fluencies (0.1, 0.5, 1.0, 5.2, and 10.4 mJ/cm). Inset—the dependence of initial amplitude of transient transmission on pump fluence.

Image of FIG. 6.
FIG. 6.

Normalized dynamics of transient transmission of the sample Both-B, excited by various excitation pump fluencies (0.1, 0.5, 1.0, 5.2, and 10.4 mJ/cm).

Image of FIG. 7.
FIG. 7.

Normalized dynamics of transient transmission of the samples, pump fluence 1.3 mJ/cm. The time evolution of differential transmission reflects the dynamics of the photoexcited carrier population.

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/content/aip/journal/jap/114/7/10.1063/1.4818332
2013-08-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4818332
10.1063/1.4818332
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