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Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields
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10.1063/1.4818436
/content/aip/journal/jap/114/7/10.1063/1.4818436
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4818436
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-section of the studied sample and (b) sketch of the acoustic experiment setup.

Image of FIG. 2.
FIG. 2.

(a) Magnetic field dependences of Γ and up to 18 T; (b) Γ and in fields of up to 5.5 T. Arrows denote the filling factors.  = 30 MHz;  = 0.3 K.

Image of FIG. 3.
FIG. 3.

Dependence of at 30 MHz on a magnetic field at different temperatures. The filling factors are marked by arrows.

Image of FIG. 4.
FIG. 4.

Magnetic field dependence of in minima of the oscillations with filling factors ν = 2, 4, 6, 8, 10, 12, and 14 at temperatures 0.3, 0.7, 1.1, and 1.6 K.

Image of FIG. 5.
FIG. 5.

Magnetic field dependences of the real and imaginary parts of the ac conductivity;  = 0.3 K,  = 30 MHz.

Image of FIG. 6.
FIG. 6.

Temperature dependence of the real and imaginary parts of the ac conductivity for different filling factors: (a) ν = 4, (b) ν = 5, (c) ν = 6, (d) ν = 7. The lines are guides to the eye.

Image of FIG. 7.
FIG. 7.

Arrhenius plots of at various odd filling factors. Inset: The activation energy in magnetic field for odd filling factors. Lines are results of the linear fitting.

Image of FIG. 8.
FIG. 8.

Dependences of Γ and on the magnetic field at different SAW powers;  = 30 MHz,  = 0.3 K.

Image of FIG. 9.
FIG. 9.

Dependence of on magnetic field at different values of RF power introduced into the sample;  = 0.3 K.

Image of FIG. 10.
FIG. 10.

Real part of the ac conductivity vs the SAW electric field for ν = 2, 4, 6;  = 30 MHz,  = 0.3 K. Inset: vs for ν = 2, 4, 6. The lines are guides to the eye.

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/content/aip/journal/jap/114/7/10.1063/1.4818436
2013-08-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4818436
10.1063/1.4818436
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