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Defects and electronic transport in hydrogenated amorphous SiC films of interest for low dielectric constant back end of the line dielectric systems
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10.1063/1.4818480
/content/aip/journal/jap/114/7/10.1063/1.4818480
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4818480
/content/aip/journal/jap/114/7/10.1063/1.4818480
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/content/aip/journal/jap/114/7/10.1063/1.4818480
2013-08-15
2014-09-03
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defects and electronic transport in hydrogenated amorphous SiC films of interest for low dielectric constant back end of the line dielectric systems
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4818480
10.1063/1.4818480
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