1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management
Rent:
Rent this article for
USD
10.1063/1.4818794
/content/aip/journal/jap/114/7/10.1063/1.4818794
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4818794
/content/aip/journal/jap/114/7/10.1063/1.4818794
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/114/7/10.1063/1.4818794
2013-08-21
2015-05-27
Loading

Full text loading...

This is a required field
Please enter a valid email address

Oops! This section, does not exist...

Use the links on this page to find existing content.

752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4818794
10.1063/1.4818794
SEARCH_EXPAND_ITEM