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Kinetics of solid phase crystallization of amorphous silicon analyzed by Raman spectroscopy
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10.1063/1.4818949
/content/aip/journal/jap/114/7/10.1063/1.4818949
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4818949

Figures

Image of FIG. 1.
FIG. 1.

(a) Raman spectra for amorphous silicon and single crystalline silicon and (b) normalized Raman spectra for amorphous silicon and single crystalline silicon, where Raman intensity at 520 cm is set to be 1.0.

Image of FIG. 2.
FIG. 2.

Normalized Raman spectra for samples annealed at 620 °C from 10 min to 8 h and for single crystalline silicon.

Image of FIG. 3.
FIG. 3.

Raman crystallinity obtained by the method proposed in this work vs. Hall mobility for phosphorous-doped samples followed by isothermal annealing at 620 °C.

Image of FIG. 4.
FIG. 4.

Raman crystallinity as a function of annealing time at temperatures ranging from 560 °C to 640 °C.

Image of FIG. 5.
FIG. 5.

Raman crystallinity as a function of annealing time at temperatures ranging from 700 °C to 800 °C.

Image of FIG. 6.
FIG. 6.

Arrhenius plot of the measured incubation time. Notice that the measured data do not fit to straight line. The estimated straight line was obtained using the measured data at low temperatures and using the value of nucleation activation energy of 3.9 eV.

Image of FIG. 7.
FIG. 7.

measurement of resistance of a silicon wafer as a function of time at 650 °C. Notice that the value of resistance approaches to that at thermal equilibrium beyond 4 min.

Image of FIG. 8.
FIG. 8.

Grain size vs. annealing temperatures. Notice that the grain size is not sensitive to annealing temperature beyond 800 °C.

Image of FIG. 9.
FIG. 9.

Raman crystallinity vs. annealing temperature ranging from 560 °C to 800 °C.

Image of FIG. 10.
FIG. 10.

(a) Raman crystallinity as a function of annealing time for the non-doped and P-doped samples, (b) depth profile of P concentration calculated using TRIM-code simulation.

Tables

Generic image for table
Table I.

The measured and estimated incubation time vs. annealing temperatures.

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/content/aip/journal/jap/114/7/10.1063/1.4818949
2013-08-20
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Kinetics of solid phase crystallization of amorphous silicon analyzed by Raman spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/114/7/10.1063/1.4818949
10.1063/1.4818949
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